Semiconductor memory

ABSTRACT

According to one embodiment, a memory includes: a member extending in a first direction and including an oxide semiconductor layer including first to third portions arranged in order from the bit line to the source line; first, second and third conductive layers arranged along the first direction and facing the first to third portions, respectively, the first conductive layer including first material, and each of the second and third conductive layer including a second material different from the first material; a memory cell in a first position corresponding to the first portion, the memory cell including a charge storage layer in the oxide semiconductor layer; a first transistor in a second position corresponding to the second portion; and a second transistor in a third position corresponding to the third portion.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a Continuation-in-Part Application of U.S. patentapplication Ser. No. 15/704643, filed Sep. 14, 2017 and based upon andclaiming the benefit of priority from Japanese Patent Application No.2017-051456, filed Mar. 16, 2017; and No. 2018-045813, filed Mar. 13,2018, the entire contents of all of which are incorporated herein byreference.

FIELD

Embodiments described herein relate generally to a semiconductor memory.

BACKGROUND

In recent years, the amount of data used by information terminals, theInternet, and cloud services has increased explosively. In accordancewith this, memory devices are required to have increased capacity andreduce the bit cost.

An ideal memory device is a nonvolatile semiconductor device operatingat high speed, having a high storage density, and having a reduced bitcost. Under the circumstances, however, there is no memory device thatsatisfies all these requirements, and a memory device suited for aparticular purpose is provided to the user.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a bird's eye view illustrating a basic example of asemiconductor memory of the first embodiment.

FIG. 2 is a top view illustrating a basic example of a semiconductormemory of the first embodiment.

FIG. 3 is a sectional view illustrating a basic example of asemiconductor memory of the first embodiment.

FIG. 4 is a circuit diagram illustrating a basic example of asemiconductor memory of the first embodiment.

FIGS. 5, 6 and 7 illustrate a basic operation performed by asemiconductor memory of the first embodiment.

FIG. 8 is a block diagram illustrating a specific example of asemiconductor memory of the first embodiment.

FIG. 9 is an equivalent circuit diagram illustrating a specific exampleof a semiconductor memory of the first embodiment.

FIG. 10 is a bird's eye view illustrating a specific example of asemiconductor memory of the first embodiment.

FIGS. 11 and 12 are sectional views illustrating a specific example of asemiconductor memory of the first embodiment.

FIG. 13 is a waveform chart illustrating a specific example of asemiconductor memory of the first embodiment.

FIG. 14 is a sectional view illustrating a modification of asemiconductor memory of the first embodiment.

FIG. 15 illustrates a modification of a semiconductor memory of thefirst embodiment.

FIG. 16 is a sectional view illustrating a modification of asemiconductor memory of the first embodiment.

FIG. 17 illustrates a modification of a semiconductor memory of thefirst embodiment.

FIG. 18 is a sectional view illustrating a basic example of asemiconductor memory of the second embodiment.

FIG. 19 is a circuit diagram illustrating a configuration example of asemiconductor memory of the second embodiment.

FIG. 20 is a top view illustrating a configuration example of asemiconductor memory of the second embodiment.

FIGS. 21 and 22 are sectional views illustrating a configuration exampleof a semiconductor memory of the second embodiment.

FIG. 23 is a waveform chart illustrating an operation example of asemiconductor memory of the second embodiment.

FIG. 24 is a sectional view illustrating a basic example of asemiconductor memory of the second embodiment.

FIG. 25 is a circuit diagram illustrating a configuration example of asemiconductor memory of the second embodiment.

FIG. 26 is a top view illustrating a configuration example of asemiconductor memory of the second embodiment.

FIGS. 27 and 28 are sectional views illustrating a configuration exampleof a semiconductor memory of the second embodiment.

FIG. 29 is a waveform chart illustrating an operation example of asemiconductor memory of the second embodiment.

FIGS. 30 and 31 are sectional views illustrating a modification of asemiconductor memory of the second embodiment.

FIG. 32 is a circuit diagram illustrating a modification of asemiconductor memory of the second embodiment.

FIG. 33 is a top view illustrating a configuration example of asemiconductor memory of the second embodiment.

FIG. 34 is a sectional view illustrating a modification of asemiconductor memory of the second embodiment.

FIG. 35 is a circuit diagram illustrating a modification of asemiconductor memory of the second embodiment.

FIG. 36 is a top view illustrating a configuration example of asemiconductor memory of the second embodiment.

FIG. 37 is a sectional view illustrating a modification of asemiconductor memory of the second embodiment.

FIG. 38 is a sectional view illustrating a modification of asemiconductor memory of the third embodiment.

FIG. 39 is a sectional view illustrating a modification of asemiconductor memory of the fourth embodiment.

FIG. 40 is a sectional view illustrating a configuration example of asemiconductor memory of the fifth embodiment.

FIG. 41 is a sectional view illustrating a modification of asemiconductor memory of the fifth embodiment.

FIG. 42 is a sectional view illustrating a modification of asemiconductor memory of the fifth embodiment.

FIG. 43 is a bird's eye view illustrating a configuration example of asemiconductor memory of the sixth embodiment.

FIG. 44 is a top view illustrating a configuration example of asemiconductor memory of the sixth embodiment.

FIG. 45 is a sectional view illustrating a configuration example of asemiconductor memory of the sixth embodiment.

DETAILED DESCRIPTION

In general, according to one embodiment, a semiconductor memoryincludes: a bit line; a bit line; a source line; a member extending in afirst direction from the bit line to the source line and including anoxide semiconductor layer, a first end of the oxide semiconductor layerin the first direction is in contact with the source line, and a secondend of the oxide semiconductor layer in the first direction electricallydisconnected from the bit line, the oxide semiconductor layer includinga first portion, second portion, and third portion arranged in orderfrom the second end to the first end; first, second and third conductivelayers disposed along the first direction, the first conductive layerfacing the first portion and including a first material, the secondconductive layer facing the second portion and including a secondmaterial different from the first material, and the third conductivelayer facing the third portion including the second material; a memorycell in a first position corresponding to the first portion, the memorycell including a charge storage layer in the first portion; a firsttransistor in a second position corresponding to the second portion; anda second transistor in a third position corresponding to the thirdportion.

EMBODIMENTS

Semiconductor memories according to embodiments will be described withreference to FIGS. 1 to 45. In the description below, elements havingthe same functions and configurations will be denoted by the samereference symbols. In the embodiments described below, where structuralelements denoted by reference symbols having numbers or letters at theend for discrimination (e.g., word lines WL, bit lines BL, variousvoltages and signals) do not have to be discriminated from each other,the numbers or letters at the end are omitted.

First Embodiment

A semiconductor memory according to the first embodiment will bedescribed with reference to FIGS. 1 to 17.

(1) Basic Example

A basic example of the semiconductor memory according to the presentembodiment will be described with reference to FIGS. 1 to 7.

<Configuration>

The configuration of the basic example of the semiconductor memoryaccording to the present embodiment will be described with reference toFIGS. 1 to 3. FIG. 1 is a bird's eye view illustrating a control unit ofthe semiconductor memory of the present embodiment.

The semiconductor memory of the present embodiment includes a pluralityof control units (basic elements) MU. In the semiconductor memory 1 ofthe present embodiment, the control unit MU shown in FIG. 1 is used as abasic structural element for storing data. Each control unit MU isconfigured to store (retain) data of not less than 1 bit. In thedescription given below, the control unit MU will be referred to as amemory unit.

As shown in FIG. 1, the memory unit MU includes a plurality ofconductive layers (interconnects) SGX, SGY and WL and a pillar PLR.

The memory unit MU is provided between the conductive layer serving as asource line SL and the conductive layer serving as a bit line BL. At oneend in the Z direction of the memory unit MU, the source line SL isprovided on the upper portion of the pillar PLR. At the other end in theZ direction of the memory unit MU, the bit line BL is provided at thelower portion of the pillar PLR. One end of the memory unit MU isconnected to the bit line BL, and the other end of the memory unit MU isconnected to the source line SL.

The conductive layers SGX, SGY and WL are stacked on the surface of asubstrate 90 in the. Z direction. Insulating layers (not shown) areprovided between the respective adjacent layers of the conductive layersSL, SGX, SGY, WL and BL, which are adjacent in the Z direction.

The insulating layers electrically separate the conductive layers SL,SGX, SGY, WL and BL.

The source line SL (an uppermost layer) is located at the upper end ofthe stack including the conductive layers SGX, SGY and WL (and theinsulating layers), and the bit line BL (a lowermost layer) is locatedat the lower end of that stack. Conductive layer SGX is a layer which isone layer lower than the source line SL. Conductive layer WL is a layerwhich is one layer upper than the bit line BL. Conductive layer SGY islocated between conductive layer SGX and conductive layer WL.

Conductive layer SGX extends, for example, in the X direction.Conductive layers SGY and WL extend in the Y direction, which issubstantially perpendicular to the X direction. The Z direction is adirection substantially perpendicular to the two-dimensional planedefined by the X direction and the Y direction.

Conductive layer WL is used as a word line WL in the memory unit MU.Conductive layers SGX and SGY are used as cut-off gate lines in thememory unit MU. As will be described later, the data write and dataretention of the memory unit MU are controlled by controlling thecut-off gate lines SGX and SGY, in addition to the bit line BL, sourceline SL and word line WL.

The pillar PLR is provided inside the stack of the conductive layersSGX, SGY and WL. The pillar PLR is located between conductive layers SLand BL and extends in the Z direction. The pillar PLR penetrates theconductive layers SGX, SGY and WL in the Z direction. The upper end ofthe pillar PLR is in contact with the bottom surface of conductive layerSL. The lower end of the pillar PLR is in contact with the upper surfaceof conductive layer BL. The pillar PLR has a structure in which aplurality of layers are stacked from the center of the pillar PLR to theouter periphery (X direction or Y direction) in a direction (crosssection) parallel to the X-Y plane.

The memory unit MU includes a plurality of elements MC, SX and SY.

Elements MC, SX and SY are provided at respective intersections betweenthe pillar PLR and the conductive layers WL, SGX and SGY.

Element MC is provided at the intersection between the pillar PLR andconductive layer WL extending in the Y direction. Element MC functionsas a data retaining portion of the memory unit MU. Element MC retains(stores) data, using an oxide semiconductor layer included in the pillarPLR. For example, element MC is a field-effect transistor having astacked gate structure.

In the description below, element MC will be referred to as a memorycell MC.

Element SX is provided at the intersection between the pillar PLR andconductive layer SGX extending in the X direction. Element SX is afield-effect transistor formed of the pillar PLR and conductive layerSGX. Element SX functions as an element for controlling a data retentionstate in the memory cell MC in the X direction. Element SX functions asa select element for selecting memory unit MU with respect to the Xdirection at the time of data write.

Element SY is provided at the intersection between the pillar PLR andconductive layer SGY extending in the Y direction. Element SY is afield-effect transistor formed of the pillar PLR and conductive layerSGY. Element SY functions as an element for controlling a data retentionstate in the memory cell MC in the Y direction. Element SY functions asa select element for selecting memory unit MU with respect to the Ydirection at the time of data write.

In the description below, elements SX and SY will be referred to ascut-off transistors SX and SY.

In the memory unit MU, cut-off transistors SX and SY and the memory cellMC are arranged in the Z direction on the side surface of the pillarPLR.

FIGS. 2 and 3 are sectional views of a memory unit MU of thesemiconductor memory of the present embodiment. FIG. 2 is a top viewillustrating the planar structure of the memory unit MU. FIG. 3 shows asectional structure of the memory unit MU. In FIG. 2, a section alongthe plane defined by the X direction and the Y direction is shown.

As shown in FIGS. 2 and 3, the pillar PLR is provided in a hole (throughhole) formed in conductive layers SGX, SGY and WL (and the insulatinglayers). For example, the pillar PLR has a cylindrical structure.

In this case, as shown in FIG. 2, the pillar PLR includes a plurality oflayers (films) which are arranged concentrically, with the Z directionas a central axis. A plurality of layers 61, 62, 63 and 64 are providedbetween the conductive layer WL (and conductive layers SGX and SGY andthe insulating layers) and the center portion (axial portion) 60 of thepillar PLR.

Layer (axial portion) 60 has a cylindrical structure. Layer 60 is formedof an insulating material. For example, the material of layer 60 is asilicon oxide.

Layer 61 is provided on the side surface of layer 60 (the side surfaceis a surface parallel to the X-Y plane and will be referred to as anouter circumferential surface as well). Layer 61 is located betweenlayer 60 and layer 62. Layer 61 has a cylindrical structure.

Layer 61 is a semiconductor layer. In the description below, layer 61will be referred to as a semiconductor layer 61.

The material of the semiconductor layer 61 is selected frompolycrystalline silicon (Si), polycrystalline germanium (Ge),polycrystalline silicon germanium (SiGe), an oxide semiconductor (e.g.,InGaZnO), a two-dimensional semiconductor material (e.g., MoS₂ or WSe₂)or the like. The semiconductor layer 61 may comprise a laminated filmincluding at least two films of these materials, for example, alaminated film of silicon and germanium or a laminated film of two ormore two-dimensional semiconductor materials.

Layer 62 is provided on the side surface (outer circumferential surface)of layer 61. Layer 62 is provided between layer 61 and layer 63. Layer62 has a cylindrical structure.

Layer 62 is formed of an insulating material. In the description below,layer 62 will be referred to as an insulating layer as well. Forexample, the material of the insulating layer 62 is selected fromsilicon oxide, silicon oxynitride, a high dielectric constant material(e.g., aluminium oxide, hafnium oxide or zirconium oxide), or the like.The insulating layer 62 may be a mixture film of these materials or alaminated film thereof.

The film thickness of the insulating layer 62 is set within the range of1 nm to 10 nm. Desirably, the film thickness of the insulating layer 62is set, for example, within the range of 3 nm to 7 nm.

Layer 63 is provided on the side surface (outer circumferential surface)of layer 62. Layer 63 is provided between layer 62 and layer 64. Layer63 has a cylindrical structure.

Layer 63 is formed of an oxide semiconductor. In the description below,layer 63 will be referred to as an oxide semiconductor layer 63.

The material of the oxide semiconductor layer 63 is an oxide of indium(In), gallium (Ga), zinc (Zn) or tin (Sn), or a mixture (compound) ofsuch oxides. For example, the material of the oxide semiconductor layer63 is InGaZnO or InGaSnO. The material of the oxide semiconductor layer63 may be used as the semiconductor layer 61.

The film thickness of the oxide semiconductor layer 63 is set within therange of 1 nm to 15 nm. Desirably, the film thickness of the oxidesemiconductor layer 63 is set, for example, within the range of 3 nm to10 nm.

Layer 64 is provided on the side surface (outer circumferential surface)of layer 63. Layer 64 is provided between layer 63 and conductive layerWL (and conductive layers SGX and SGY and the insulating layers).

Layer 64 is formed of an insulating material. In the description below,layer 64 will be referred to as an insulating layer as well.

Insulating Layer 64 is formed of the same material as insulating layer62. The film thickness of insulating layer 64 is equal or nearly equalto that of insulating layer 62. The material of insulating layer 64 maybe different from that of insulating layer 62. The film thickness ofinsulating layer 64 may be different from that of insulating layer 62.

The thicknesses of layers 61, 62, 63 and 64 are thicknesses as measuredin a direction parallel to the X-Y plane.

As shown in FIG. 3, conductive layer 80 serving as bit line BL isprovided on the substrate 90.

Conductive layer 81 serving as word line WL, conductive layer 82 servingas cut-off gate line SGY and conductive layer 83 serving as cut-off gateline SGX are stacked above bit line BL.

Conductive layers 81, 82 and 83 are covered with respective insulatinglayers (not shown). For example, each of the conductive layers 81, 82and 83 is a single-layer film or a laminated film including at least oneof a polycrystalline silicon, metal, and conductive compound (forexample, silicide).

Conductive layer 84 serving as source line SL is provided aboveconductive layer 83, with an insulating layer interposed.

One end (bottom portion) of the semiconductor layer 61 of the pillar PLRin the Z direction, is in direct contact with conductive layer 80. Theother end (top portion) of the semiconductor layer 61 in the Zdirection, is in direct contact with conductive layer 84. For example,in the bottom portion of the pillar PLR, the semiconductor layer 61 isprovided between conductive layer 80 and insulating layer 60. The bottomportion of insulating layer 60 in the Z direction, is in contact withthe semiconductor layer 61.

Conductive layers 80, 83 and 84 extend in the X direction, whileconductive layers 81 and 82 extend in the Y direction.

In the oxide semiconductor layer 63 (OS) of the pillar PLR, the bottomportion of the oxide semiconductor layer 63 (OS) in the Z direction isin contact with insulating layer 89 formed on conductive layer 80.Insulation Layer 89 is provided between conductive layer 80 and theoxide semiconductor layer 63. The oxide semiconductor layer 63 isseparated from conductive layer 80 by insulating layer 89. The upperportion of the oxide semiconductor layer 63 in the Z direction is indirect contact with conductive layer 84.

A through hole (opening portion) is provided in insulating layer 89.Insulating layer 60 and the semiconductor layer 61 are provided insidethe hole of insulating layer 89. For example, in the hole of insulatinglayer 89, insulating layer 62 is provided between the side surface ofinsulating layer 89 and the side surface of the semiconductor layer 61.Neither the oxide semiconductor layer 63 nor insulating layer 64 isprovided in the hole of insulating layer 89.

The bottom portion of insulating layer 62 in the Z direction is incontact with, for example, conductive layer 80. The bottom portion ofinsulating layer 64 in the Z direction is in contact with, for example,insulating layer 89. The upper portions of insulating layers 62 and 64in the Z direction, are in contact with conductive layer 84.

The memory cell MC is formed of a member located near the intersectionbetween conductive layer 81 and the pillar PLR. For example, the memorycell MC is a field-effect transistor having a stacked gate structureincluding a charge storage layer made of the oxide semiconductor layer63.

Conductive layer 81 is used as word line WL, and is also used as thecontrol gate electrode of transistor (memory cell) MC. For example, wordline WL is referred to as a control gate line as well.

That portion CS of the oxide semiconductor layer 63 facing theconductive layer 81 is used as the charge storage layer CS of the memorycell MC (the charge storage layer will be referred to as a floating gateas well). Portion CS of the oxide semiconductor layer 63 functions as adata retaining portion of the memory cell MC.

The semiconductor layer 61 is used as a channel region of transistor MC.Insulating layer 62 is used as the gate insulating film of transistorMC. Insulating layer 64 functions as a block layer for separating theoxide semiconductor layer 63 from conductive layer 81. Insulating layer64 may be used as the gate insulating film located between conductivelayer (gate electrode) 81 and the oxide semiconductor layer (chargestorage layer) 63.

For example, the memory cell MC is configured to exhibit the property ofa normally-on transistor in the state where the oxide semiconductorlayer 63 is depleted. Owing to this, the semiconductor layer 61 is ann-type semiconductor layer or a high-concentration n-type semiconductorlayer (n⁺-type semiconductor layer).

In the description below, the semiconductor layer 61 of the memory cellMC may be referred to as a sensing portion or a reading portion. Thetransistor portion using the semiconductor layer 61 of the memory cellMC as a channel region may be referred to as a sense transistor or aread transistor.

Cut-off transistor SY is formed of a member located near theintersection between conductive layer 82 and the pillar PLR.

Conductive layer 82 is used as cut-off gate line SGY, and is also usedas the gate electrode of transistor SY. The oxide semiconductor layer 63in transistor SY is used as the channel region between source line SLand charge storage layer CS. Insulating layer 64 of transistor SY isused as a gate insulating film for the channel region of the oxidesemiconductor layer 63.

The semiconductor layer 61 in transistor SY is used as the channelregion between source line SL and bit line BL. Insulating layer 62 oftransistor SY is used as the gate insulating film for the semiconductorlayer 61.

Cut-off transistor SX is formed of a member located near theintersection between conductive layer 81 and the pillar PLR.

Conductive layer 83 is used as cut-off gate line SGX, and is also usedas the gate electrode of transistor SX. The oxide semiconductor layer 63in transistor SX is used as the channel region between source line SLand charge storage layer CS. Insulating layer 64 in transistor SX isused as a gate insulating film for the channel region of the oxidesemiconductor layer 63.

The semiconductor layer 61 in transistor SX is used as the channelregion between source line SL and bit line BL. Insulating layer 62 intransistor SX is used as the gate insulating film for the semiconductorlayer 61.

In the semiconductor memory of the present embodiment, the oxidesemiconductor layer 63 of the memory unit MU is a film that iscontinuous between the memory cell MC and source line SL.

In the description below, for the sake of simplification, the channelregion (current path) using the semiconductor layer 61 in transistors SXand SY may be referred to as a first current path and the channel region(current path) using the oxide semiconductor layer 63 in transistors SXand SY may be referred to as a second current path. Depending upon theoperation of transistors SX and SY, the channel formed in thesemiconductor layer 61 in transistors SX and SY may be a parasiticchannel.

Cut-off transistors SX and SY are configured to be in the ON state whendata is written in the memory cell MC. Cut-off transistors SX and SYselect the memory unit MU (memory cell) in the write operation, and alsoserve as a path along which charges move between source line SL andcharge storage layer CS.

Cut-off transistors SX and SY are configured to be in the OFF state whendata is retained in the memory cell MC or read from the memory cell MC.When data is retained or read, cut-off transistors SX and SY cut off themovement of charges between the charge storage layer CS of the memorycell MC and source line SL. As a result, the charge storage layer CS canbe set in the electrically floating state.

Cut-off transistors SX and SY may be referred to as cell transistors,transfer gate transistors or select transistors. Cut-off gate lines SGXand SGY may be referred to as word lines, transfer gate lines or selectgate lines.

For example, the memory cell (memory unit) of the semiconductor memoryof the present embodiment has a cell size of approximately 4F² (the areain the X-Y plane). “F” is a minimum dimension (minimum line width) thatcan be formed by lithography.

The above-mentioned memory unit MU of the semiconductor memory of thepresent embodiment can be formed using the known film depositiontechnology, lithography technology and etching technology.

FIG. 4 illustrates the circuit of the memory unit of the semiconductormemory of the present embodiment.

As shown in FIG. 4, one end of the memory cell MC (i.e., one of thesource/drain) is connected to bit line BL. The other end of the memorycell MC is connected to source line SL.

The charge storage layer CS of the memory cell is connected to sourceline SL by way of the oxide semiconductor layer OS serving as thecurrent paths of transistors SX and SY. With this configuration, theelectric conduction between the charge storage layer CS and the sourceline SL is controlled by turning on or off transistors SX and SY.

<Principle and Operation>

The principle underlying the memory unit (memory cell) of thesemiconductor memory of the present embodiment will be described withreference to FIGS. 5 to 7.

FIG. 5 illustrates the characteristics of the memory unit (memory cell)of the semiconductor memory of the present embodiment.

In FIG. 5, the abscissa of the graph represents a gate voltage of thememory cell (transistor), while the ordinate of the graph represents adrain current of the memory cell. In FIG. 5, solid line A1 indicates theV-I characteristics of the transistor when electrons are accumulated inthe charge storage layer of the memory cell. Broken line A2 indicatesthe V-I characteristics of the transistor when electrons are depleted inthe charge storage layer of the memory cell.

As described above, the memory cell MC is a normally-on transistor inthe state where electrons are depleted in the charge storage layer(oxide semiconductor layer) 63.

Therefore, as indicated by characteristic curve A2, the memory cell MChas a negative threshold voltage Va1 in the state where electrons aredepleted in the charge storage layer 63.

When the gate voltage of the normally-on memory cell MC is 0V, thememory cell MC is in the ON state. In this case, the memory cell MCoutputs a drain current whose current value is I1.

As indicated by characteristic curve A1, the threshold voltage of thememory cell MC increases in the state where electrons are accumulated inthe charge storage layer 63. The memory cell MC is changed into anormally-off transistor by controlling the amount of charges in thecharge storage layer 63.

For example, when the gate voltage of the normally-off memory cell MC is0V, the memory cell MC is in the OFF state. In this case, the draincurrent of the memory cell is substantially 0. The memory cell MC whosecharge storage layer is in the accumulation state is turned on when agate voltage higher than a positive threshold voltage Va2 is appliedthereto. Owing to this, the memory cell MC whose charge storage layer isin the accumulation state outputs a drain current.

By associating the magnitude of the drain current (the ON/OFF state ofthe memory cell) with data, it can be discriminated whether the memorycell MC stores “1” data or “0” data.

For example, “0” data is regarded as being stored in the memory cell MCwhen the charge storage layer 63 is in the depletion state, and “1” datais regarded as being stored in the memory cell MC when charge storagelayer 63 is in the accumulation state.

In this case, a gate voltage of 0V is applied to the control gateelectrode (word line WL) of the memory cell MC as a read voltage. By sodoing, it can be discriminated based on the magnitude of the draincurrent whether the data in the memory cell MC is “1” data or “0” data.

As described above, the threshold voltage of the memory cell MC changesin accordance with whether there are charges (electrons) in the chargestorage layer CS of the oxide semiconductor layer 63 of the memory cellMC. As a result, where a read voltage more than a predetermined value isapplied to the gate of the memory cell MC, the magnitude of the draincurrent changes in accordance with the amount of charges in the chargestorage layer CS.

By utilizing the characteristics described above, the memory cell MC ofthe semiconductor memory of the present embodiment can store data of 1bit or more.

FIG. 6 is a schematic diagram illustrating how a write operation isperformed for the memory unit (memory cell) of the semiconductor memoryof the present embodiment.

As shown in FIG. 6, charges are stored in the charge storage layer CS ofthe memory cell MC when the write operation is performed.

In the semiconductor memory of the present embodiment, electrons (e⁻)are supplied from source line SL to the charge storage layer CS by wayof the channel (storage layer) formed in the oxide semiconductor layer63 in the cut-off transistors SX and SY that are in the ON state.

In the present embodiment, electrons are supplied to the charge storagelayer CS of the memory cell MC (or released therefrom) in a directionparallel to the layer surface of the charge storage layer CS (the filmsurface of the oxide semiconductor film 63). In the present embodiment,the layer surface of the charge storage layer CS is substantiallyparallel to the Z direction.

To store (accumulate) charges in the charge storage layer 63, thecontrol gate electrode 81 (word line WL) of the memory cell MC isapplied with, for example, a positive voltage VWR. As a result, thememory cell MC is set in the ON state.

In the semiconductor memory of the present embodiment, when a writeoperation is performed for a selected memory unit MU, the gateelectrodes 82 and 83 of cut-off transistors SX and SY are applied withthe on voltage Von of transistor SX and SY.

As a result, a channel is formed in the oxide semiconductor layer 63 oftransistors SX and SY.

The charge storage layer CS of the memory cell MC is electricallyconnected to source line SL by way of the channel formed in the oxidesemiconductor layer 63 of transistors SX and SY. Source line SL isapplied with a voltage having voltage value VX (e.g., 0V or a positivevoltage lower than voltage VWR). For example, bit line BL is appliedwith the same voltage as that of source line SL. Because of theconnection between source line SL and the charge storage layer 63,electrons (e⁻) are induced in the charge storage layer 63, which isopposed to the control gate electrode 81 of the memory cell MC.

In the state where the control gate electrode 81 is applied with voltageVWR, the gate electrodes 82 and 83 of cut-off transistors SX and SY areapplied with the off voltage (e.g., a voltage of 0V) of transistors SXand SY. Because of the application of 0V voltage to the gate electrodes82 and 83, the channel disappears from those portions of the oxidesemiconductor layer 63 which are opposed to the gate electrodes 82 and83. In cut-off transistors SX and SY, therefore, the channel region ofthe oxide semiconductor layer 63 is set in the depletion state.

As a result, the charge storage layer CS, in which the charges of thememory cell MC are accumulated, is electrically disconnected from sourceline SL.

Since cut-off transistors SX and SY are in the OFF state, electrons areprevented from leaking from the charge storage layer CS to source lineSL.

After the charge storage layer CS is electrically disconnected fromsource line SL, the control gate electrode 81 of the memory cell MC isset in the electrically floating state or set to 0V. In addition, avoltage of 0V is applied to source line SL and bit line BL.

Because of this, the memory cell MC is kept in the state where electronsare stored (accumulated) in the charge storage layer CS.

Since charges are stored in the charge storage layer CS, the memory cellMC is changed into a normally-off transistor.

To set the charge storage layer CS of the memory cell MC in thedepletion state, voltage VWR of 0V is applied to the control gateelectrode (word line) of the memory cell MC when a channel is generatedin the oxide semiconductor layer 63 of cut-off transistors SX and SY.

Because of this, electrons are released from the charge storage layerCS, without the electrons being induced in the charge storage layer CSof the memory cell MC. As a result, the charge storage layer 63 of thememory cell MC is set in the depletion state.

In the manner mentioned above, data is written in the memory cell MC inthe semiconductor memory of the present embodiment.

As described above, the charge storage layer CS switches between thestate where electrons are stored and the state where no electron isstored, and because of this, the memory cell MC can retain 1-bit data.

A description will be given with reference to FIG. 7 as to how thememory cell retains data in the semiconductor memory of the presentembodiment.

FIG. 7 is a schematic diagram illustrating how the band gap state iswhen data is retained in the memory cell in the semiconductor memory ofthe present embodiment. In FIG. 7, energy Ec at the lower end of theconduction band of the oxide semiconductor used for the charge storagelayer and energy Ev at the upper end of the valence band are shown basedon the positional relationships between the memory cell MC and thecut-off transistors SX and SY.

As shown in FIG. 7, the memory cell MC and cut-off transistors SX and SYare provided on the continuous oxide semiconductor layer OS.

When electrons (e⁻) are accumulated in the charge storage layer CS,energy level Ec of the oxide semiconductor layer OS in the memory cellMC is lower than Fermi level Ef.

The band gap of the oxide semiconductor used for the charge storagelayer CS (namely, the difference between energy Ec and energy Ev) isapproximately three times as large as the band gap of silicon. Forexample, the band gap of InGaZnO is approximately 3.5 eV.

For this reason, even when electrons (e⁻) are stored in the chargestorage layer CS of the memory cell, the leakage of electrons due to theband-to-band tunneling between the conduction band and the valence bandof the oxide semiconductor is negligible.

Therefore, unless cut-off transistors SX and SY are both turned on, theelectrons in the charge storage layer CS of the memory cell MC areretained in the oxide semiconductor layer OS, and are not released tosource line SL.

Even if the charge storage layer CS of the memory cell

MC is not a floating gate isolated from the other members, the memorycell MC of the semiconductor memory of the present embodiment can retaindata in a substantially nonvolatile manner.

(2) Specific Example

A specific example of the semiconductor memory according to the presentembodiment will be described with reference to FIGS. 8 to 13.

<Circuit Configuration>

FIG. 8 is a block diagram illustrating a configuration example of thesemiconductor memory of the present embodiment.

As shown in FIG. 8, the semiconductor memory 1 of the present embodimentis electrically connected to a host device 9. The host device 9 is, forexample, a memory controller or a processor (e.g., a CPU).

The semiconductor memory 1 operates in response to a request or aninstruction supplied from the host device 9. The host device 9 isprovided externally of the semiconductor memory 1. The semiconductormemory 1 may be provided inside the host device 9, if so desired.

When operating the semiconductor memory 1, the host device 9 transmits acommand, addresses and various control signals to the semiconductormemory 1.

When a write operation is performed for the semiconductor memory 1, thehost device 9 transmits data to be written (data to be recorded) to thesemiconductor memory 1, together with a write command. When a readoperation is performed for the semiconductor memory 1, the host device 9receives data read from the semiconductor memory 1, as a response to aread command.

The semiconductor memory 1 of the present embodiment includes a memorycell array 10, a decoder 11, a row control circuit 12, a column controlcircuit 13, a write/read circuit 14, an input/output circuit 15, avoltage generation circuit 16 and a sequencer 17.

The memory cell array 10 includes a plurality of memory units MU.

The memory cell array 10 includes one or more sub arrays. Each sub arrayincludes a plurality of bit lines (e.g., 256 to 4096 bit lines), aplurality of source lines SL (e.g., 256 to 4096 source lines), and aplurality of word lines (e.g., 8 to 512 word lines).

Where the memory cell array 10 includes one or more sub arrays, the subarray or each sub array includes a plurality of first cut-off gate linesSGX (e.g., 256 to 4096 lines) and a plurality of cut-off gate lines SGY(e.g., 8 to 512 lines).

The decoder 11 decodes addresses supplied from the host device 9. A rowaddress of the memory cell array 10 and a column address of the memorycell array 10 are decoded by the decoder 11.

The row control circuit 12 controls the rows of the memory cell array10, based on the decoded address results obtained by the decoder 11. Therow control circuit 12 selects a memory unit MU corresponding to the rowaddress decoded with respect to the X direction of the memory cell array10. For example, the row control circuit 12 includes a word line driver(word line selection circuit).

The column control circuit 13 controls the columns of the memory cellarray 10, based on the decoded address results obtained by the decoder11. The column control circuit 13 selects a memory unit MU correspondingto the column address decoded with respect to the Y direction of thememory cell array 10. For example, the column control circuit 13includes a bit line driver (bit line selection circuit).

The write/read circuit 14 performs a data write operation and a dataread operation for the memory unit MU selected in the memory cell array10, based on the write command and read command. For example, thewrite/read circuit 14 include a write driver (and a sinker), a readdriver and a sense amplifier.

The input/output circuit 15 functions as an internal interface of thesemiconductor memory 1. The input/output circuit 15 receives data, acommand, a control signal and addresses supplied from the host device 9.The input/output circuit 15 supplies data received from the memory cellarray 10 to the host device 9. For example, the input/output circuit 15includes a latch circuit that can temporarily store data, a command, asignal and addresses.

The voltage generation circuit 16 generates various voltages used forthe write operation and the read operation. The voltage generationcircuit 16 supplies the generated voltages to the row control circuit12, column control circuit 13 and write/read circuit 14.

Based on a command and a control signal, the sequencer 17 controls theoperations of circuits 10-16 of the semiconductor memory 1 such that theoperation requested or instructed by the host device 9 can be executed.

For example, the semiconductor memory 1 of the present embodiment is arandom access memory employing an oxide semiconductor as a chargestorage layer (memory film).

FIG. 9 is an equivalent circuit diagram of a random-access memory cellarray according the present embodiment. In connection with FIG. 9, adescription of contents substantially similar to those explained withreference to FIG. 4 will be omitted.

In FIG. 9, only the memory units MU arranged in the 2×2 matrix, whichare included in the memory units arranged in the m x n matrix of thememory cell array, are illustrated for the sake of simplicity. Thesymbols m and n are natural numbers not less than 2.

As shown in FIG. 9, in the memory cell array 10, a plurality of memoryunits MU (four memory units in this example) are arranged in the Xdirection and in the Y direction.

A plurality of source lines SL (SL<0> and SL<1>) (two source lines inthis example) are arranged in the memory cell array 10 in accordancewith the number of memory units MU. A plurality of memory units MU (twomemory units in this example) arranged in the X direction are connectedat one end to each source line SL.

A plurality of bit lines BL (BL<0> and BL<1>) (two bit lines in thisexample) are arranged in the memory cell array 10 in accordance with thenumber of memory units MU. A plurality of memory units MU (two memoryunits in this example) arranged in the X direction are connected at theother end to each bit line BL.

A plurality of cut-off gate lines SGX (SGX<0> and SGX<1>) (two cut-offgate lines in this example) are arranged in the memory cell array 10 inaccordance with the number of memory units MU. Each cut-off gate lineSGX is connected to the gates of cut-off transistors SX of a pluralityof memory units MU (two memory units in this example) arranged in the Xdirection.

A plurality of cut-off gate lines SGY (SGY<0> and SGY<1>) (two cut-offgate lines in this example) are arranged in the memory cell array 10 inaccordance with the number of memory units MU. Each cut-off gate lineSGY is connected to the gates of cut-off transistors SY of a pluralityof memory units MU (two memory units in this example) arranged in the Ydirection.

A plurality of word lines WL (WL<0> and WL<1>) (two word lines in thisexample) are arranged in the memory cell array 10 in accordance with thenumber of memory units MU. Each word line WL is connected to the gatesof memory cells MC of a plurality of memory units MU (two memory unitsin this example) arranged in the Y direction.

As can be seen from the above, the charge storage layer (oxidesemiconductor layer) CS of memory cell MC is connected to source line SLby way of the channel region of the oxide semiconductor layer 63 oftransistors SX and SY.

<Configuration Example>

A configuration example of the memory cell array of the semiconductormemory (e.g., random access memory) of the present embodiment will bedescribed with reference to FIGS. 10 to 12.

FIG. 10 is a bird's eye view illustrating the configuration example ofthe memory cell array of the semiconductor memory of the presentembodiment.

FIGS. 11 and 12 are sectional views illustrating the configurationexample of the memory cell array of the semiconductor memory of thepresent embodiment. FIG. 11 shows an X-direction sectional structure ofthe memory cell array. FIG. 12 shows a Y-directional sectional structureof the memory cell array.

In FIGS. 10 to 12, only the memory units arranged in the 2×2 matrix,which are included in the memory units arranged in the m×n matrix, areillustrated, as in FIG. 9.

In the description given with reference to FIGS. 10 to 12, a descriptionof contents substantially similar to those explained with reference toFIGS. 1 to 3 will be omitted.

As shown in FIGS. 10 to 12, in the memory cell array 10, a plurality ofmemory units MU are arranged in the X direction and the Y directionabove the substrate (insulating layer) 90 on the semiconductor substrate91.

A plurality of bit lines BL (BL<0> and BL<1>) are arranged on thesubstrate (insulating layer) 90. Each bit line BL extends in the Xdirection. Bit lines BL are arranged in the Y direction.

A plurality of memory units MU (two memory units in this example)arranged in the X direction are arranged on one bit line BL.

A plurality of source lines SL (SL<0> and SL<1>) are arranged abovememory units MU.

Each source line SL is arranged on memory units MU arranged in the Xdirection.

For example, each source line SL is connected to the semiconductor layer(e.g., n⁺-type polycrystalline Si layer) 61 of the pillar PLR by way ofa source line contact 87.

The semiconductor layer 61 extends from source line SL to bit line BL.

The oxide semiconductor layer (e.g., InGaZnO layer) 63 extends in the Zdirection from the upper surface of insulating layer 89 to source lineSL. The oxide semiconductor layer 63 is isolated from bit line BL byinsulating layer 89.

The oxide semiconductor layer 63 is in direct contact with source lineSL. For example, the oxide semiconductor layer 63 is provided betweenthe upper surface of insulating layer (interlayer insulation film) 99Aand the bottom surface of source line SL. The bottom surface of sourceline SL is in contact with the oxide semiconductor layer 63 aboveinsulating layer 99A. With this configuration, the contact area betweensource line SL and the oxide semiconductor layer 63 increases, ascompared with the case where only the end portion of the oxidesemiconductor layer 63 is in contact with source line SL. As a result,the memory device of the present embodiment is featured in that theelectric resistance between source line SL and the oxide semiconductorlayer 63 can be decreased, and electrons are allowed to move at highspeed between source line SL and the charge storage layer CS in a writeoperation.

For example, the oxide semiconductor layer 63 is continuous between thememory units MU adjacent in the X direction. The oxide semiconductorlayer 63 is disconnected between the memory units MU adjacent in the Ydirection. The oxide semiconductor layer 63 may be continuous betweenthe memory units MU adjacent in the Y direction. For example, insulatinglayer 64 is provided between the oxide semiconductor layer 63 and theupper surface of insulating layer 99A.

Conductive layers 81 serving as word lines WL (WL<0> and WL<1>) andconductive layers 82 serving as cut-off gate lines SGY (SGY<0> andSGY<1>) extend in the Y direction. Conductive layers 81 and conductivelayers 82 intersect with a plurality of pillars PLR arranged in the Ydirection.

Conductive layers 83 serving as cut-off gate lines SGX (SGX<0> andSGX<1>) extend in the X direction. Conductive layers 83 intersect with aplurality of pillars arranged in the X direction.

For example, a plurality of field-effect transistors (e.g., MOStransistors) Tr and metal interconnects INT may be arranged on thesemiconductor substrate (semiconductor region) 91 provided under thememory cell array 10. Field-effect transistors Tr are used as circuits11-17 of the semiconductor memory 1.

Each transistor Tr is arranged on a well region 910 in the semiconductorsubstrate 91.

The gate electrode 911 of transistor Tr is provided on the channelregion between two source/drain regions 913 and 914, with a gateinsulating film 912 interposed.

For example, each metal interconnect INT is electrically connected totransistor Tr by way of contact CP formed on the source/drain region913, 914 of transistor Tr. Metal interconnect INT electrically connectsa plurality of transistors Tr together and electrically connectstransistors Tr and memory units MU together.

In FIGS. 11 and 12, each transistor Tr is a planar-type transistor. Inplace of this, a three-dimensional field-effect transistor, such as aFinFET or an embedded gate structure transistor, may be provided on thesemiconductor substrate 91 at a position under the memory cell array 10.

<Operation Example>

An operation example of the semiconductor memory (e.g., random accessmemory) of the present embodiment will be described with reference toFIG. 13.

FIG. 13 is a timing chart illustrating an operation example of therandom access memory of the present embodiment.

In the description below, the off voltage of a cut-off transistor has avoltage value that does not generate a channel in the oxidesemiconductor layer. The on voltage of the cut-off transistor has avoltage value that generates a channel in the oxide semiconductor layer.The on voltage and off voltage of the cut-off transistor vary, dependingupon the characteristics of the cut-off transistor.

In the description below, a memory unit and a memory cell that areselected as operation targets will be referred to as a selected unit anda selected cell, respectively. In contrast, a memory unit and a memorycell that are not selected will be referred to as a non-selected unitand a non-selected cell, respectively.

(a) Write Operation

In a write operation, the host device 9 transfers a write command,various control signals, addresses indicative of a data write target,and data to be written in a memory cell (hereinafter referred to aswrite data) to the random access memory 1.

Based on the command and control signals, the random access memory 1carries out a data write operation for the selected unit (selected cell)indicated by the addresses.

Based on the command and control signals, the sequencer 17 controls thecircuits of the random access memory 1. Based on the decoded addressresults obtained by the decoder 11, the row control circuit 12 and thecolumn control circuit 13 activate and inactivate the interconnects ofthe memory cell array 10. Based on the write data supplied from theinput/output circuit 15, the write/read circuit 14 determines voltagesto be applied to interconnects (e.g., selected word lines) of the memorycell array 10. For example, the write driver is driven in the write/readcircuit 14.

As a result, various voltages for the write operation are applied to theinterconnects of the memory cell array 10.

As shown in FIG. 13, in the write operation, a voltage of 0V is appliedto the non-selected word lines WLx, non-selected source lines SLx,non-selected bit lines BLx and non-selected cut-off gate lines SGXx andSGYx.

As a result, the non-selected memory units MU are inactivated. In eachnon-selected memory unit MU, at least one of the two cut-off transistorsSX and SY is set in the OFF state. In the non-selected unit MU,therefore, the charge storage layer CS of the non-selected cell MC iselectrically disconnected from source line SL by the cut-off transistorsSX and SY in the OFF state.

For example, in non-selected unit MU connected to selected source lineSLs and selected cut-off gate line SGXs, transistor SY connected tonon-selected cut-off gate line SGYx is in the OFF state. Therefore, evenif selected source line SLs is applied with a voltage and selectedcut-off gate line SGXs is applied with an on voltage, the charge storagelayer CS of a non-selected cell is electrically disconnected fromselected source line SLs by cut-off transistor SY in the OFF state.

For example, in non-selected unit MU connected to selected word line WLsand selected cut-off gate line SGYs, transistor SX connected tonon-selected cut-off gate line SGXx is in the OFF state. Therefore, evenif selected cut-off gate line SGYs is applied with an on voltage, thecharge storage layer CS of a non-selected cell is electricallydisconnected from selected source line SLs by cut-off transistor SX inthe OFF state.

As described above, in the random access memory of the presentembodiment, reliable selection and non-selection with respect to the rowdirection and the column direction are ensured by the control of thecut-off gate lines SGX and SGY, and non-selected cells are preventedfrom performing an undesirable operation.

To suppress a parasitic channel in the semiconductor layer 61 of cut-offtransistors SX and SY, negative voltage Vng may be applied tonon-selected cut-off gate lines SGXx and SGYx. To prevent data frombeing mistakenly written in a non-selected cell, for example,non-selected word line WLx may be kept in an electrically floatingstate.

At time t1, on voltage Von is applied to selected cut-off gate linesSGXs and SGYs in a selected unit (selected cell). As a result, a channelis formed in the channel regions of cut-off transistors SX and SY in theselected unit. By the continuous oxide semiconductor layer 63, thecharge storage layer CS of the memory cell MC is electrically connectedto source line SL by way of the channel.

Source line voltage VSL having voltage value VX is applied to selectedsource line SLs. For example, voltage value VX is applied to selectedbit line BLs.

In the write operation, it is preferable that the potential of selectedbit line BLs be equal to the potential of selected source line SLs, soas to prevent a current from flowing between selected source line SLsand selected bit line BLs. It is also preferable that the potential ofnon-selected bit line BLx be equal to the potential of non-selectedsource line SLx.

Write voltage VWL having a predetermined voltage value is applied toselected word line WLs. For example, in a memory cell that stores 1-bitdata, the voltage value of write voltage VWR is set at 0V in order towrite “0” data. By application of voltage VWR of 0V, electrons dischargefrom the charge storage layer CS of the oxide semiconductor layer 63 ofthe memory cell MC and flow to source line SL.

Write voltage VWR is set at voltage value V1 sufficiently higher than 0Vin order to write “1” data. By application of write voltage VWR havingvoltage value V1, electrons from selected source line SL flow throughthe channel in the oxide semiconductor layer 63 of on-state transistorsSG and SY and are supplied (induced) to the charge storage layer CS ofthe oxide semiconductor layer 63 of the memory cell MC.

At time t2, which is after the application of write voltage VWR toselected word line WLs, a voltage of 0V (i.e., the off voltage Voff oftransistors SX and SY) is applied to selected cut-off gate lines SGXsand SGYs. The channel in the oxide semiconductor layer 63 disappearsfrom transistors SX and SY. Since transistors SX and SY are in the OFFstate, the charge storage layer CS is electrically disconnected fromsource line SL.

Because of this, the depletion state or accumulation state of the chargestorage layer CS of selected cell MC is maintained.

As described above, the threshold voltage (on voltage) of a selectedcell varies in accordance with the amount of electrons stored in thecharge storage layer CS of the memory cell MC. The threshold voltage ofthe memory cell MC having a charge storage layer in which electrons arestored is higher than the threshold voltage of the memory cell having acharge storage layer in which electrons are not stored. For example,where electrons are stored in the charge storage layer CS, the memorycell MC serves as a normally-off transistor. Where electrons are notstored in the charge storage layer CS, the memory cell MC serves as anormally-on transistor.

In the manner described above, the write operation for a selected cellis completed in the random access memory of the present embodiment.

For example, the sequencer 17 notifies the host device 9 of thecompletion of the write operation.

(b) Data Retention Operation

In the random access memory of the present embodiment, the operationwhich the selected unit performs after the completion of the writeoperation is a data retention operation.

As shown in FIG. 13, in the data retention operation, the potential ofselected cut-off gate lines SGXs and SGYs is set at 0V at time t2.Selected word line WLs is set in the electrically floating state. As aresult, the diffusion (leakage) of electrons from the charge storagelayer CS or the flow of electrons into the charge storage layer CS isprevented.

In this manner, the data retention condition of the memory cell MC ismaintained.

(c) Read Operation

In a read operation, the host device 9 transfers a read command, variouscontrol signals, and addresses indicative of a data read target to therandom access memory 1.

Based on the command and control signals, the random access memory 1carries out a data read operation for the memory unit (memory cell)indicated by the addresses.

Based on the command and control signals, the sequencer 17 controls thecircuits of the random access memory 1. Based on the decoded addressresults, the row control circuit 12 and the column control circuit 13activate and inactivate the interconnects of the memory cell array 10.The write/read circuit 14 activates the sense amplifier, read driver,etc.

As a result, various voltages for the read operation are applied to theinterconnects of the memory cell array 10.

As shown in FIG. 13, in the read operation, a voltage of 0V is appliedto the non-selected word lines WLx, non-selected source lines SLx,non-selected bit line BLx and non-selected bit lines BLx.

For example, where the n⁺-type semiconductor layer 61 becomes aparasitic channel in cut-off transistors SX and SY, a negative voltageVng of a predetermined value may be applied to non-elected cut-off gatelines SGXx and SGYx of non-selected unit MU.

Because of the application of that voltage, those portions of then⁺-type semiconductor layer 61 opposed to the gate electrodes 82 and 83of cut-off transistors SX and SY are depleted. As a result, a current isvirtually prevented from flowing into the region between the bit lineand the source line of non-selected unit. MU. A voltage of 0V may beapplied to non-selected cut-off gate lines SGXx and SGYx.

In non-selected unit MU, at least one of the two cut-off transistors SXand SY is set in the OFF state, as in the write operation. In the readoperation, therefore, the non-selected unit and the non-selected cellare prevented from operating undesirably.

As described above, in the data read operation, the non-selected unit MUand the non-selected cell MC are inactivated.

At time t3, a voltage of 0V is applied to selected cut-off gate linesSGXs and SGYs in selected memory unit MU. As a result, cut-offtransistors SX and SY of selected unit MU are set in the OFF state withrespect to the channel region of the oxide semiconductor layer 63. Inthe read operation, therefore, the charge storage layer CS of theselected cell MC is electrically disconnected from selected source lineSLs by the cut-off transistors SX and SY in the OFF state.

A bit line voltage VBL having a predetermined voltage value VY (e.g., apositive voltage value) is applied to selected bit line BLs. Selectedsource line SLs is set in the electrically floating state.

Word line voltage VRD having a positive voltage value V2 is applied toselected word line WLs. Voltage VRD is applied to the control gateelectrode of selected cell MC. The voltage value V2 of read voltage VRmay be 0V.

As a result, a current (read current) flows to the n⁺-type semiconductorlayer between selected source line SL and selected bit line BL inaccordance with an operation performed by selected cell MC to which readvoltage VRD is applied.

The magnitude of a read current for a given read voltage VDR varies inaccordance with the amount of electrons stored in the charge storagelayer CS of selected cell MC.

For example, the current value of a read current is smaller in the casewhere electrons are stored in the charge storage layer CS of selectedcell MC than in the case where electrons are not stored in the chargestorage layer CS of selected cell MC. The voltage value V2 of readvoltage VRD is properly set such that the current value of a readcurrent can have a proper margin in accordance with the amount ofelectrons in the charge storage layer.

The sense amplifier of the write/read circuit 14 senses a read current(or the potential of selected source line SLs) and compares it with apredetermined reference value. Alternatively, the sense amplifier senseswhether or not the read current is present.

By this operation, it is discriminated whether the data in selected cellMC is “1” data or “0” data.

As described above, in the random access memory of the presentembodiment, data stored in a selected cell can be read, based on themagnitude of the current flowing between selected source line SLs andselected bit line BLs (or the value of the resistance between the sourceline and the bit line).

At time t4, a voltage of 0V is applied to selected word line WLs,selected cut-off gate lines SGXs and SGYs, non-selected cut-off gatelines SGXx and SGYx, selected source line SLs and selected bit line BLs.

The sequencer 17 transfers the data read from the memory cell to thehost device 9.

In the manner described above, the read operation for a selected cell iscompleted in the random access memory of the present embodiment.

(3) Modifications

Modifications of the semiconductor memory of the present embodiment willbe described with reference to FIGS. 14 to 17.

<Modification 1>

An example of a modification of the semiconductor memory (e.g., randomaccess memory) of the present embodiment will be described withreference to FIGS. 14 and 15.

FIG. 14 is a sectional view illustrating a configuration of themodification of the random access memory of the present embodiment.

As shown in FIG. 14, a source line contact 87 x may be provided in thehole of the stacked structure including conductive layers 81-83 andinsulating layers. For example, the source line contact 87 extendsthrough the pillar PLR (inside the cylinder formed of insulating layer62).

For example, the bottom of the source line contact 87 x is located at aposition (height) between the bottom of conductive layer (cut-off gateline) 82 and the top of conductive layer (word line) 81.

Conductive layers 82 and 83 are opposed to the side surface of thesource line contact 87 x. Conductive layer 81 is not opposed to thesource line contact 87 x.

An oxide semiconductor layer 63 sandwiched by two insulating layers 62and 64 is provided between the source line contact 87 x and conductivelayers 82 and 83. A semiconductor layer 61 x may be or not be presentbetween conductive layer 82 and the source line contact 87 x or betweenconductive layer 83 and the source line contact 87 x.

The upper portion of the insulating layer 60 x is located between thebottom portion of conductive layer 82 and the upper portion ofconductive layer 81. The upper portion of the insulating layer 60 x isin contact with the bottom portion of the source line contact 87 x. Theinside surface or upper portion of the semiconductor layer 61 x is incontact with the bottom portion of the source line contact 87 x.

The memory unit MU having the configuration shown in FIG. 14 can employa normally-off transistor as a memory cell MC. In this case, eitherlow-concentration n-type semiconductor layer (n⁻-type semiconductorlayer) or a p-type semiconductor layer is used as the semiconductorlayer 61 x.

FIG. 15 is a graph illustrating the characteristics of the memory cellshown in FIG. 14.

In FIG. 15, the abscissa of the graph represents a gate voltage of thetransistor (memory cell), while the ordinate of the graph represents adrain current of the transistor. In FIG. 15, solid line B1 indicates theV-I characteristics of the transistor when electrons are stored in thecharge storage layer of the memory cell (accumulation state). Brokenline B2 indicates the V-I characteristics of the transistor whenelectrons are depleted in the charge storage layer of the memory cell(depletion state).

As shown in FIG. 15, the normally-off memory cell MC is in the OFF statewhen a gate voltage of 0V is applied. The normally-off memory cell MC isturned on when a positive voltage higher than a voltage Vz2 is appliedto the gate electrode.

As indicated by characteristic lines B1 and B2 in FIG. 15, even wherethe memory unit MU of the configuration of FIG. 14 employs anormally-off transistor as memory cell MC, the threshold voltages Vzland Vz2 of the memory cell MC and the drain currents thereof vary inaccordance with whether charges are stored in the charge storage layerCS or not (accumulation state or depletion state).

Owing to this, the memory cell MC can retain data of 1 bit or more.

Therefore, the random access memory employing the memory unit of thepresent modification does not need a circuit for generating andcontrolling a negative voltage and the circuit configuration of the chipof the random access memory can be simplified.

As a result, the random access memory of the present embodiment can bemanufactured at low cost.

<Modification 2>

An example of a modification of the semiconductor memory (e.g., randomaccess memory) of the present embodiment will be described withreference to FIG. 16.

FIG. 16 is a sectional view illustrating a configuration of themodification of the random access memory of the present embodiment.

As shown in FIG. 16, a plurality of memory cell units MU may be stackedin the Z direction in the memory cell array 10.

The memory cell array 10 shown in FIG. 16 includes a first array layer100 and a second array layer 101.

In the first array layer 100, a plurality of memory units MUA arearranged in two dimensions. In the second array layer 101, a pluralityof memory units MUB are arranged in two dimensions. The second arraylayer 101 is provided on the first array layer 100 in the Z direction.

Stacked two memory units MUA and MUB share one source line SL.

Memory cell MCb and transistors SXb and SYb of memory unit MUB arestacked on source line SL. Bit line BLb of memory unit MUB is providedabove memory cell MCb and transistors SXb and SYb. Bit line BLa used formemory unit MUA is provided on insulating layer 90.

The stacking order in which elements MCb, SXb and SYb of memory unit MUBare stacked in the Z direction is opposite to that in which elementsMCa, SXa and SYa of memory units MUA are stacked in the Z direction.

In memory unit MUB, two cut-off transistors SXb and SYb are providedbelow memory cell MC (on a substrate side). Cut-off transistor SYb isprovided between memory cell MCb and cut-off transistor SXb.

In memory unit MUB, the oxide semiconductor layer 63 is electricallydisconnected from bit line BLb by insulating layer 89Z.

In memory unit MUB, the upper portion of semiconductor layer 61 iselectrically connected to bit line BLb by way of bit line contact 87Z.In memory unit MUB, the bottom portion of semiconductor layer 61 is incontact with source line SL.

Memory units MUA and elements MCa, SXa and SYa have substantiallysimilar configurations to those described with reference to FIGS. 3, 12and 13.

A plurality of memory layers may be stacked on each other such that thememory units stacked in the Z direction can share one bit line. In thiscase, a source line is provided in each memory layer.

In the random access memory of the present modification, a plurality ofmemory units are stacked in the Z direction. With this configuration,the memory cell array can have a high recording density, and themanufacturing cost per a bit (bit cost) can be reduced.

<Modification 3>

An example of a modification of the semiconductor memory (e.g., randomaccess memory) of the present embodiment will be described withreference to FIG. 17.

In the semiconductor memory including a memory cell whose charge storagelayer is made of an oxide semiconductor layer, the write voltage in awrite operation can be controlled such that the memory cell MC can storedata of 2 bits or more.

FIG. 17 illustrates the memory cell that retains data of 2 bits or morein the random access memory of the embodiment. In FIG. 17, the abscissaof the graph represents the amount of charges stored in the chargestorage layer, while the ordinate of the graph represents frequency orprobability of the memory cell to hold a certain amount of charges.

FIG. 17 illustrates an example in which the memory cell MC stores dataof 2 bits.

Where the memory cell MC stores 2-bit data (“00”, “01”, “10” and “11”),four distributions (charge storage states) D1, D2, D3 and D4corresponding to the amount of charges in the charge storage layer CSare associated with the 2-bit data.

By using four voltage values as write voltage VWR, 2-bit data is writtenin the memory cell MC. The memory cell MC can be set in one of the fourstates in accordance with the value of write voltage VWR.

The amount of charges induced in the charge storage layer CS varies inaccordance with the value of write voltage VWR. Where write voltage VWRis 0V, the amount of electrons in the charge storage layer CS is set asdistribution D1 corresponding to the state where “00” data is stored.

Where write voltage VWR has voltage value V1, the amount of electrons inthe charge storage layer CS is set as distribution D4 corresponding tothe state where “11” data is stored.

Where the voltage value of write voltage VWR is made smaller thanvoltage value Vi used for writing the “11” data, the amount of electronsaccumulated in the charge storage layer CS can be set to be larger thanthe amount of electrons corresponding to distribution D1 and smallerthan that corresponding to distribution D4.

For example, where the value of write voltage VWR is approximately onethird of voltage value V1, the amount of electrons in the charge storagelayer CS is set as distribution D2 corresponding to the state where “01”data is stored.

Where the value of write voltage VWR is approximately two thirds ofvoltage value V1, the amount of electrons in the charge storage layer CSis set as distribution D3 corresponding to the state where “10” data isstored.

In a read operation, the drain current of the memory cell MC varies whenread voltage VR is applied. The 2-bit data stored in the memory cell MCcan be identified by comparing the drain current with a reference value.

The amount of electrons supplied to the memory cell may be controlled bycontrolling the voltage value VX of selected source line SL in a writeoperation.

The data stored in memory cell MC may be identified by checking whetheror not the memory cell MC is turned on in response to a plurality ofvoltage values applied to the control gate electrode in a readoperation.

Where 3-bit data is written in the memory cell MC, eight voltage valuesare used as a write voltage.

As can be seen from this, the memory cell MC can store data of 2 bits ormore by increasing the number of voltage values used as a write voltage.

(4) Conclusion

The semiconductor memory of the first embodiment is a memory (e.g., arandom access memory) including a memory cell in which an oxidesemiconductor layer is used for a charge storage layer.

A DRAM using a capacitor executes a refresh operation to maintain thereliability of data, after a read operation and when data is retained.The DRAM has the problem that the power consumption increases due to therefresh operation.

In a system using the DRAM, when the system is set in the sleep mode,extra operations, such as save operation of data from the DRAM to anonvolatile memory or data loading again upon resume, are performed dueto the fact that the DRAM is a volatile memory. As a result, the cost ofthe system may increase.

The semiconductor memory of the present embodiment stores data byaccumulating charges in the oxide semiconductor layer having acomparatively wide band gap.

Accordingly, the semiconductor memory of the present embodiment canprevent electrons from leaking from the memory cell, and the dataretention characteristics of the memory cell can be improved. Thesemiconductor memory of the present embodiment can eliminate a refreshoperation or can reduce frequency of the refresh operation. As a result,the semiconductor memory of the present embodiment can reduce the powerconsumption.

The semiconductor memory of the present embodiment can reduce the areaof the control unit used for storing data. In addition, thesemiconductor memory of the present embodiment enables a memory cell tostore multi-valued data. As a result of these, the semiconductor memoryof the present embodiment can reduce the bit cost.

Furthermore, since the semiconductor memory of the present embodimentenables a write/read operation to be performed without a high voltage,degradation of the films of the memory cell can be suppressed.

As described above, the semiconductor memory of the present embodimentis a semiconductor memory having high performance. In addition, thesemiconductor memory of the present embodiment can reduce the memorycost.

Second Embodiment

A semiconductor memory according to the second embodiment will bedescribed with reference to FIGS. 18 to 37.

(1) First Example

A first example of the semiconductor memory (e.g., random access memory)of the second embodiment will be described with reference to FIGS. 18 to23.

<Basic Example>

A basic example of the random access memory of the present embodimentwill be described with reference to FIG. 18.

FIG. 18 is a sectional view illustrating a basic configuration of therandom access memory of the present embodiment. In FIG. 18, illustrationof the interlayer insulation film covering a memory unit is omitted.

As shown in FIG. 18, in the random access memory of the presentembodiment, constituent elements MCZ and SZ of memory unit MUZ arearranged on a substrate 90 in two dimensions.

A semiconductor layer 61Z is provided above the substrate (e.g.,semiconductor substrate) 90. The semiconductor layer 61Z extends, forexample, in the Y direction. The semiconductor layer 61Z is used as achannel region of memory cell MCZ of the stacked gate structure.

An oxide semiconductor layer (e.g., InGaZnO layer) 63Z is provided abovethe semiconductor layer 61Z, with insulating layer 62Z interposed. Theoxide semiconductor layer 63Z extends, for example, in the Y direction.

The oxide semiconductor layer 63Z is electrically connected to thesemiconductor layer 61Z by way of contact 85C.

A control gate electrode (conductive layer) 81Z of memory cell MCZ and agate electrode (conductive layer) 82Z of cut-off gate transistor SZ areprovided above the oxide semiconductor layer 63Z, with insulating layer64Z interposed. For example, insulating layer 64Z functions as a blockinsulating film between the control gate electrode 81Z and chargestorage layer CS. Insulating layer 64Z functions as a gate insulatingfilm between the gate electrode 82Z and the oxide semiconductor layer63Z.

The control gate electrode 81Z and the gate electrode 82Z are arrangedside by side in the Y direction. The control gate electrode 81Z and thegate electrode 82Z extend, for example, in the X direction. The controlgate electrode 81Z is used as a word line WL. The gate electrode 82Z isused as a cut-off gate line SZ. The X direction is a direction parallelto the substrate surface and perpendicular to the Y direction.

Conductive layer 80Z serving as a bit line BL is electrically connectedto one end of the oxide semiconductor layer 63Z in the X direction, byway of bit line contact 85A. Bit line contact 85A is provided on theupper surface of the oxide semiconductor layer 63Z. The bit line BL iselectrically connected to the semiconductor layer 61Z by way of theoxide semiconductor layer 63Z and contact 85C. Bit line contact 85A mayextend through the oxide semiconductor layer 63Z up to the semiconductorlayer 61Z. In this case, bit line contact 85A is electrically connectedto the oxide semiconductor layer 63Z and the semiconductor layer 61Z.

Conductive layer 84Z serving as source line SL is electrically connectedto the other end of the semiconductor layer 61Z in the X direction, byway of source line contact 85B.

Source line contact 85B is provided on the upper surface of thesemiconductor layer 61Z. Source line contact 85B is arranged at aposition shifted from the position of bit line contact 85A in the Xdirection.

Source line contact 85B is isolated from the oxide semiconductor layer63Z by an interlayer insulation film (not shown).

For example, a back gate electrode 65 is provided below thesemiconductor layer 61Z, with insulating film 60Z interposed. The backgate electrode 65 extends, for example, in the X direction. Insulatingfilm 60Z is used as a gate insulating film between the back gateelectrode 65 and the semiconductor layer 61Z (insulating film 60Z may bereferred to as a back gate insulating film as well).

Since the back gate electrode 65 is provided, the potential of a channelformed in the semiconductor layer 61Z in memory cell (sense transistor)MCZ can be controlled in a stable manner.

As a result, the accuracy with which data is read from memory cell MCZcan be improved.

The stabilization of the channel potential by the back gate electrode 65is particularly advantageous to the case where memory cell MCZ retainsdata of 2 bits or more.

In memory unit MUZ shown in FIG. 18, the first terminal (source) ofmemory cell MCZ is connected to source line SL, and the second terminal(drain) of memory cell MCZ is connected to bit line BL.

One end of cut-off transistor SZ is continuously connected to the chargestorage layer CS of memory cell MCZ, without an electrode or aninterconnect being interposed. The other end of cut-off transistor SZ isconnected to bit line BL. For example, the oxide semiconductor layer 63Zincluding the charge storage layer CS is used as a channel region ofcut-off transistor SZ.

The material of the semiconductor layer 61Z may be the same as thesemiconductor layer 61 of the first embodiment. The semiconductor layer61Z is, for example, an n-type polysilicon layer.

The material of the oxide semiconductor layer 63Z may the same as theoxide semiconductor layer 63 of the first embodiment.

Where the semiconductor layer 61Z and the oxide semiconductor layer 63Zare formed of the same materials as layers 61 and 63 of the firstembodiment, layers 61Z and 63Z may have thicknesses selected fromsubstantially the same ranges as layers 61 and 63.

<Specific Example>

A specific example (which is more specific than the first example) ofthe random access memory of the present embodiment will be describedwith reference to FIGS. 19 to 22.

(a) Circuit Example

FIG. 19 is an equivalent circuit diagram of the memory cell array of therandom access memory of the present embodiment. In FIG. 19, only 2×2memory units, which are included in the m×n memory units of the memorycell array, are illustrated for the sake of simplicity.

As shown in FIG. 19, in a plurality of memory units MUZ arranged in theX direction, the control gate electrodes of a plurality of memory cellsMCZ are connected to common word line WL (WL<0>, WL<1>).

In the memory units MUZ arranged in the X direction, the gate electrodesof a plurality of cut-off transistors SZ are connected to common cut-offgate line SGZ (SGZ<0>, SGZ<1>).

In the memory units MUZ arranged in the X direction, the back gateelectrodes are connected to common back gate line BGL (BGL<0>, BGL<1>).

The memory units MUZ arranged in the Y direction are connected, at oneend, to common bit line BL (BL<0>, BL<1>). The memory units MUZ arrangedin the Y direction are connected, at the other end, to common sourceline SL (SL<0>, SL<1>). For example, the two memory units MUZ adjacentin the X direction are connected to the same source line SL.

The first terminal of memory cell MCZ is connected to source line SL.The second terminal of memory cell MCZ and the terminal of cut-offtransistor SZ (i.e., one end of channel region) are connected to bitline BL.

In each memory unit MUZ, the charge storage layer CS of memory cell MCZis connected to bit line BL by way of the channel region of cut-offtransistor SZ.

For example, the 2×2 memory units MUZ shown in FIG. 19, which constituteone unit, are arranged in the memory cell array 10 in two dimensions.

(b) Configuration Example

FIGS. 20 to 22 illustrate a configuration example of the memory cellarray of the random access memory of the present embodiment.

FIG. 20 is a top view of the memory cell array of the random accessmemory of the present embodiment. FIG. 21 is a Y-direction sectionalview of the memory cell array of the random access memory of the presentembodiment. FIG. 22 is an X-direction sectional view of the memory cellarray of the random access memory of the present embodiment.

In FIGS. 20 to 22, only 2×2 memory units, which are included in the m×nmemory units of the memory cell array, are illustrated for the sake ofsimplicity.

As shown in FIGS. 20 to 22, the memory units MUZ adjacent in the Ydirection share one semiconductor layer 61Z. The semiconductor layer 61Zcontinuous in the Y direction between two memory units MUZ. Thesemiconductor layers 61Z adjacent in the X direction are electricallyisolated from each other.

Two oxide semiconductor layers 63Z are provided above one semiconductorlayer 61Z. Insulating layer 62Z is provided between each oxidesemiconductor layer 63Z and the semiconductor layer 61Z.

Source line contact 85B is provided in the region between two oxidesemiconductor layers 63Z. Bit line contact 85A and source line contact85B are arranged on the same line with respect to the Y direction.

Conductive layer 81Z serving as word line WL, conductive layer 82Zserving as cut-off gate line SGZ and conductive layer 65 serving as backgate line BGL extend in the X direction, so that these conductive layerscan be shared by the memory units MUZ arranged in the X direction. Backgate line BGL intersects with a plurality of semiconductor layers 61Z,with insulating layer 50Z interposed in the Z direction.

Two word lines WL adjacent in the Y direction are laid out between twocut-off gate lines SGZ. Source line contact 85B is arranged between twoword lines WL. Word line WL extending in the X direction intersects witha plurality of oxide semiconductor layers 63Z, with insulating layer 62Zinterposed.

In the memory units MUZ adjacent in the Y direction (i.e., the memoryunits MUZ sharing semiconductor layer 61Z), the arrangement of memorycells MCZ and cut-off transistors SZ are symmetrically.

Conductive layer 80Z serving as bit line BL and conductive layer 84Zserving as source line SL extend mainly in the Y direction, so thatthese conductive layers can be shared by a plurality of memory units MUZarranged in the Y direction.

Source line SL is arranged between two bit lines BL adjacent in the Xdirection.

For example, bit line BL and source line SL are at the same interconnectlevel. In the present embodiment, the “interconnect level” is intendedto refer to the position (height) in the vertical direction (the Zdirection) to the surface of the substrate.

Bit line BL and source line SL are arranged at positions that do notvertically overlap semiconductor layer 61Z or oxide semiconductor layer63A.

Bit line BL and source line SL are led to positions that do notvertically overlap the oxide semiconductor layer 63Z by portions whichextend in the X direction from the upper surfaces of contacts 85A and85B on the semiconductor layer 61Z.

As in the semiconductor memory shown in FIG. 14, transistors that formcircuits of the semiconductor memory 1 may be provided on asemiconductor substrate (not shown) below the substrate 90.

(c) Operation Example

An operation example of the random access memory of the presentembodiment will be described with reference to FIG. 23.

FIG. 23 is a timing chart showing an operation example of the randomaccess memory of the present embodiment.

For example, the random access memory of the present embodiment enablesa write operation to be performed simultaneously for a plurality ofmemory units arranged in the X direction (i.e., the memory cellscommonly connected to a selected word line).

As shown in FIG. 23, on voltage Von of a transistor is applied toselected word line WLs and selected cut-off gate line SGZs. For example,a voltage of 0V is applied to back gate lines BGLs and BGLx.

For example, off voltage Voff of 0V is applied to non-selected cut-offgate line SGZx. As a result, cut-off transistor SZ of a non-selectedunit is set in the OFF state. The charge storage layer CS ofnon-selected cell MCZ is electrically disconnected from bit lines BLsand BLz by cut-off transistor SZ in the OFF state. To prevent data frombeing mistakenly written in a non-selected cell, for example,non-selected word line WLx may be kept in an electrically floatingstate.

In the present embodiment, the potential of selected bit line BLs iscontrolled in accordance with data to be written. As a result, data canbe individually written in each of the memory cells MCZ commonlyconnected to selected word line WLs.

Where electrons are accumulated in the charge storage layer CS, avoltage of 0V is applied to selected bit line BLs as write voltage VWR.Conversely, where electrons are discharged from the charge storage layerCS, a voltage having a voltage value VA larger than 0V (i.e., a positivevoltage value) is applied to selected bit line BLs as write voltage VWR.Voltage value VA is approximately in the range of 1V to 5V.

Thereafter, off voltage Voff is applied to selected cut-off gate lineSGZs, and cut-off transistor SZ is set in the OFF state.

Subsequently, selected word line WLs is set in the electrically floatingstate. Because of this, selected cell MCZ is set in the data retentionstate, and selected cell MCZ maintains an accumulation state or adepletion state of the charge storage layer CS.

In the present embodiment, one memory cell MC can store data of 2 bitsor more by controlling the voltage value of the write voltage applied toselected bit line BL, as in the example described with reference to FIG.17. For example, where four voltage values (e.g., 0V, (⅓)×VA, (⅔)×VA,and VA) are used as write voltage VWR applied to bit line BL, one memorycell MC can store data of 2 bits.

One memory cell MC can store data of 3 bits or more by furtherincreasing the number of voltage values used as write voltage VWR.

In the read operation, a voltage of 0V is applied to selected cut-offgate line SGZs. As a result, cut-off transistor SZ of a selected unit MUis set in the OFF state.

Selected word line WLs is set in the electrically floating state. Avoltage of 0V may be applied to selected word line WLs.

A voltage of 0V is applied to non-selected word line WLx, non-selectedcut-off gate line SGZs, non-selected bit line BLx, non-selected backgate line BGLx and non-selected source line SLx. Negative voltage Vngmay be applied to non-selected cut-off gate line SGZx.

Read voltage VRD having voltage value VB is applied to selected bit lineBLs and selected back gate line BGLs. Selected source line SL is set to0V.

The current flowing between selected bit line BLs and selected sourceline SL is sensed. As a result, the data in selected cell MCZ isidentified.

The data in selected cell MCZ may be read by applying read voltage VR toselected word line WL. In this case, the voltage value of read voltageVRD applied to selected word line WLs is kept at a certain voltagevalue.

(2) Second Example

A second example of the semiconductor memory (e.g., random accessmemory) of the second embodiment will be described with reference toFIGS. 24 to 28. In connection with this example, the descriptionredundant with the first example mentioned above will be omitted.

<Basic Example>

A basic example of the second example of the random access memory of thepresent embodiment will be described with reference to FIG. 24.

As shown in FIG. 24, in the memory unit MU of this example, interconnect(injection line) IL is connected to the oxide semiconductor layer 63Z byway of contact 85D.

Contact 85D is provided on the upper surface of the oxide semiconductorlayer 63Z.

Charge storage layer CS is connected to injection line IL by way of thechannel region of cut-off transistor SZ.

In the memory unit MUZ shown in FIG. 24, bit line BL is not connected tothe oxide semiconductor layer 63Z. An insulating layer (not shown) isprovided between bit line BL and the oxide semiconductor layer 63Z. Bitline BL is isolated from the oxide semiconductor layer 63Z by theinsulating layer.

In this example, electrons are supplied to charge storage layer CS andreleased therefrom using injection line IL, not bit line BL (or a sourceline).

Conductive layer 86Z serving as injection line IL is provided at aninterconnect level higher than that of conductive layers 80Z and 84Z.

<Specific Example>

A specific example (which is more specific than the second example) ofthe random access memory of the present embodiment will be describedwith reference to FIGS. 25 to 28.

(a) Circuit Configuration

FIG. 25 is an equivalent circuit diagram of the memory cell array of therandom access memory of the present embodiment.

As shown in FIG. 25, injection line IL (IL<0>, IL<1>) is connected incommon to a plurality of memory units MUZ arranged in the Y direction.

A plurality of memory units MUZ arranged in the X direction areconnected to different injection lines IL.

Bit line BL is connected to memory cells MCZ arranged in the Ydirection. Bit line is not connected to cut-off transistor SZ.

(b) Configuration

FIGS. 26 to 28 illustrate a configuration example of the memory cellarray of the random access memory of the present embodiment.

FIG. 26 is a top view of the memory cell array of the random accessmemory of the present embodiment. FIG. 27 is a Y-direction sectionalview of the memory cell array of the random access memory of the presentembodiment. FIG. 28 is an X-direction sectional view of the memory cellarray of the random access memory of the present embodiment.

As shown in FIGS. 26 to 28, conductive layer 86Z serving as injectionline IL extends in the Y direction.

Conductive layer 86Z is provided at an interconnect level higher thanthat of conductive layers 80Z and 84Z.

Injection line IL is provided at a position vertically overlapping thesemiconductor layer 61Z and oxide semiconductor layer 63Z in the Zdirection. Injection line IL is laid out in the region between bit lineBL and source line SL.

Injection line IL is connected to the oxide semiconductor layer 63Z byway of contact 85D. Contact 85D is provided on the upper surface of theoxide semiconductor layer 63Z.

Injection line IL is electrically connected to charge storage layer CSby way of the channel region of cut-off transistor SZ.

For example, contact 85D is adjacent to bit line contact 85A in the Ydirection.

Bit line contact 85B is provided on the upper surface of thesemiconductor layer 61Z. Bit line BL is connected to the semiconductorlayer 61Z by way of bit line contact 85A.

Contact 85D, bit line contact 85A and source line contact 85B arearranged on the same line with respect to the Y direction.

(c) Operation

An operation example of the random access memory of the presentembodiment will be described with reference to FIG. 29.

FIG. 29 is a timing chart showing an operation example of the randomaccess memory of the present embodiment.

As shown in FIG. 29, in the write operation, the potential of selectedbit line BLs is set at the same potential (e.g., 0V) as selected sourceline SLs.

The on voltage Von of memory cell MCZ and transistor SZ are applied toselected word line WLs and selected cut-off transistor SGZ.

To accumulate charges in the charge storage layer CS of a selected cellor release the charges therefrom, the potential of selected injectionline ILs is controlled.

Where electrons are accumulated in the charge storage layer CS, writevoltage VWR of 0V is applied to selected injection line ILs. Whereelectrons are released from the charge storage layer CS, write voltageVWR having a voltage value VA (e.g., 1V to 5V) is applied to selectedinjection line ILs.

In the write operation, a voltage of 0V is applied to non-selectedinjection line ILx.

Thereafter, the off voltage (e.g., 0V) of transistor SZ is applied toselected cut-off gate line SGZs. Selected word line WLs is set in theelectrically floating state. A voltage of 0V is applied to selectedinjection line ILs.

In the present embodiment, the retention of data and the reading of dataare performed in a substantially similar manner to that of the exampleshown in FIG. 23. During the retention of data and the reading of data,the potentials of the injection lines ILs and ILx of a selected cell anda non-selected cell are set at 0V.

(3) Modifications

Modifications of the random access memory of the present embodiment willbe described with reference to FIGS. 30 to 37.

<Modification 1>

FIG. 30 is a sectional view illustrating an example of a modification ofthe random access memory of the present embodiment.

As shown in FIG. 30, a back gate electrode (and a back gate line) neednot be provided for memory unit MUZ.

In the semiconductor memory shown in FIG. 24 as well, the back gateelectrode (and back gate line) may be omitted.

Where the back gate electrode is not formed, the random access memoryshown in FIG. 30 can be manufactured at lower cost. In the random accessmemory shown in FIG. 30, the area for the memory cell can be reduced.

<Modification 2>

FIG. 31 is a sectional view illustrating an example of a modification ofthe random access memory of the present embodiment.

As shown in FIG. 31, the semiconductor region 92 of the substrate 90A(e.g., a semiconductor substrate) may be used as the channel region of amemory cell, without using the semiconductor layer on an insulatinglayer as the channel region of the memory cell.

The semiconductor region 92 is, for example, a p-type silicon region(well region).

Insulating layer (gate insulating film) 62X is provided between thesemiconductor region 92 and the oxide semiconductor layer 63Z.

Source/drain regions 67A and 67B of memory cell (sense transistor) MCare provided in the semiconductor region 92. The source/drain regions67A and 67B are, for example, high-concentration n-type silicon regions(n^(±)-type silicon regions).

One source/drain region 67A is connected to bit line BL by way ofcontacts 85A and 85C and the oxide semiconductor layer 63Z. Source/drainregion 67A extends to the region below cut-off transistor SZ. Gateelectrode 82Z is arranged above source/drain region 67A.

The other source/drain region 67B is connected to source line SL by wayof contact 85B.

Control gate electrode 81Z is arranged above that semiconductor region(channel region) which is located between the two source/drain regions67A and 67B.

For example, insulating layer 98 is provided in an element isolationregion of the substrate 90A. The semiconductor region 92 is partitionedby insulating layer 98. With this configuration, memory units MUZ thatdo not share the semiconductor region 92 are electrically separated.

For example, by applying a voltage to the semiconductor region 92, aback bias (a substrate bias) can be applied to the channel region ofmemory cell MCZ.

The semiconductor memory in which injection line IL shown in FIG. 24 isconnected to the oxide semiconductor layer 63Z may employ thesemiconductor region 92 of the semiconductor substrate 90A.

Where, as in this example, memory unit MUZ is formed by employing thesemiconductor region 92 of the semiconductor substrate 90A, the numberof steps for forming the constituent elements of a memory unit can bedecreased. As a result, the random access memory shown in FIG. 31 can bemanufactured at low cost.

<Modification 3>

FIGS. 32 to 34 illustrate a modification of the random access memory ofthe present embodiment.

FIG. 32 is an equivalent circuit diagram illustrating an example of amodification of the random access memory of the present embodiment.

As shown in FIG. 32, in the random access memory of the presentembodiment, an extending direction of source line SL may be in parallelto an extending direction (the X direction in this example) of word lineWL (and cut-off gate line). In the X-Y plane, source lines SL extend ina direction intersecting with the direction (the Y direction in thisexample) in which bit lines BL extend.

FIG. 33 is a top view illustrating an example of a modification of therandom access memory of the present embodiment.

FIG. 34 is a Y-direction sectional view of the random access memoryshown in FIG. 33.

As shown in FIGS. 33 and 34, source line SL is connected in common to aplurality of memory units MUZ arranged in the X direction.

For example, source line SL is provided at an interconnect level lowerthan that of bit lines BL. Conductive layer 84A serving as source lineSL is provided at the same interconnect level as conductive layer 81Z(the control gate electrode of a memory cell) serving as word line WLand conductive layer 82Z (the gate electrode of transistor SZ) servingas cut-off gate line SGZ. Source line SL may be provided at aninterconnect level upper than that of bit line BL.

Bit lines BL are provided at a position vertically overlapping thesemiconductor layer 61Z in the Z direction. Memory cell MCZ and cut-offtransistor SZ are arranged below bit lines BL.

The random access memory shown in FIGS. 32 to 34 is advantageous in thatin a read operation, a leak current leaking between the source and drainof a non-selected cell (cell transistor) is prevented from adverselyaffecting a read current supplied to a selected cell.

As a result, the random access memory of the present modification isimproved in the data reading accuracy and the data reliability.

In the random access memory of the present embodiment, bit lines BL canbe arranged above memory cell (sense transistor) MCZ and cut-offtransistor SZ. As a result, the area of memory unit MUZ can be decreasedin the X direction.

<Modification 4>

FIGS. 35 to 37 illustrate a modification of the random access memory ofthe present embodiment.

FIG. 35 is an equivalent circuit diagram illustrating an example of amodification of the random access memory of the present embodiment.

As shown in FIG. 35, in the random access memory of the presentembodiment, even if an injection line is provided, the extendingdirection of a source line SL may extend in parallel to the extendingdirection of a word line WL (and cut-off gate lines) (in the X directionin this example).

In the X-Y plane, source lines SL extend in a direction intersectingwith the direction in which injection lines IL extend.

FIG. 36 is a top view illustrating an example of a modification of therandom access memory of the present embodiment.

FIG. 37 is a Y-direction sectional view of the random access memoryshown in FIG. 36.

For example, source line SL is provided at an interconnect level lowerthan that of bit lines BL and injection line IL. Conductive layers 86Zserving as injection lines IL are provided at the same interconnectlevel as conductive layers 80Z serving as bit lines BL.

Injection lines IL are provided at a position vertically overlapping thesemiconductor layer 63Z in the Z direction. Bit lines BL are provided ata position not vertically overlapping the semiconductor layer 63Z in theZ direction.

Like the random access memory shown in FIGS. 32 to 34, the random accessmemory of the present example can suppress the adverse effects which aleak current leaking between the source and drain of a non-selected cellmay have. Accordingly, the data reading accuracy and the datareliability can be improved.

(4) Conclusion

In the semiconductor memory of the second embodiment, memory cell MCZand cut-off transistor SZ of memory unit MUZ are arranged on thesubstrate 90 in two dimensions.

The semiconductor memory of the present embodiment can produceadvantages similar to those of the first embodiment.

Where memory cells MC and cut-off transistors SZ of memory unit MUZ arearranged on the substrate in two dimensions, as in this embodiment, thesemiconductor memory can be formed in a comparatively simple process.

As a result of this, the semiconductor memory of the present embodimentcan reduce the bit cost.

Third Embodiment

A semiconductor memory according to the third embodiment will bedescribed with reference to FIGS. 38.

FIG. 38 is a sectional view showing a structure of a memory cell stringof a semiconductor memory of the third embodiment.

The materials of gate electrodes (cut-off gate lines) of cut-offtransistors SX and SY may be different from the material of a controlgate electrode (word line) of a memory cell MC.

In FIG. 38, the material of gate electrode 83 a of cut-off transistor SXand the material of gate electrode 82 a of cut-off transistor SY are ap-type semiconductor (for example, p⁺-type polysilicon).

The material of control gate electrode 81 of the memory cell MC is ann-type semiconductor (for example, n⁺-type polysilicon). The material ofthe control gate electrode 81 may be a metal (for example, tungsten) ora conductive compound (for example, silicide).

A difference in work function between an oxide semiconductor layer (forexample, n-type oxide semiconductor layer) 63 and the p⁺-type siliconlayers 82 a and 83 a is greater than a difference in work functionbetween the oxide semiconductor layer 63 and an n⁺-type silicon layer.

Therefore, by forming the gate electrodes 82 a and 83 a of cut-offtransistors SX and SY from p⁺-type silicon, the threshold voltages ofthe cut-off transistors SX and SY are increased above the thresholdvoltage of a cut-off transistor having an n⁺-type silicon gateelectrode.

For example, if cut-off transistors SX and SY having a channel region ofan n-type oxide semiconductor layer includes the gate electrodes 83 aand 82 a of p-type silicon, the threshold voltages of cut-offtransistors SX and SY are higher than 1V.

Thus, off-leak currents of the cut-off transistors SX and SY are reducedin this embodiment when the device is turned off.

As a result, in the semiconductor memory of this embodiment, the dataretention characteristics of the memory cell MC can be improved.

The gate structure using the p-type semiconductor in the cut-offtransistors in the example shown in FIG. 38 may be applied to thecut-off transistors of the semiconductor memory of the first embodiment.

Furthermore, in the cut-off transistors in the semiconductor memory ofthe second embodiment, a p-type semiconductor layer may be used for thegate electrode of cut-off transistor SZ.

As described above, in the semiconductor memory of the third embodiment,the reliability of the memory can be improved.

Fourth Embodiment

A semiconductor memory according to the fourth embodiment will bedescribed with reference to FIGS. 39.

FIG. 39 is a sectional view showing a structure of a memory cell stringof a semiconductor memory of the fourth embodiment.

In this embodiment, as shown in FIG. 39, the gate insulating films ofcut-off transistors SX and SY include layer (for example, oxide layer)64 having a first oxygen density, and layer (for example, oxide layer)68 having a second oxygen density different from the first oxygendensity.

For example, the gate insulating films of cut-off transistors SX and SYhave a stacked structure formed of a silicon oxide layer 64 and a highdielectric constant insulating layer 68.

In cut-off transistors SX and SY, the high dielectric constantinsulating layer (for example, high dielectric constant oxide layer) 68is provided between the silicon oxide layer 64 and the gate electrode 82or 83.

The number density of oxygen atoms of the material used for the highdielectric constant insulating layer 68 is preferably greater than thenumber density of oxygen atoms of the silicon oxide.

For example, the material of the high dielectric constant insulatinglayer 68 is at least one selected from hafnium oxide, aluminium oxide,tantalum oxide, or the like. The material of the high dielectricconstant insulating layer 68 may be an oxide (binary oxide or ternaryoxide) containing at least two elements of hafnium, aluminium, tantalum,or the like.

For example, an insulating layer between the gate electrode 81 of thememory cell MC and the oxide semiconductor layer 63 has a single-layerstructure of the silicon oxide layer 64. The high dielectric constantinsulating layer 68 may be provided between the gate electrode 81 of thememory cell MC and the insulating layer 64.

In the stacked structure of the silicon oxide layer 64 and the highdielectric constant insulating layer 68, a dipole is formed on aninterface between the silicon oxide layer 64 and the high dielectricconstant insulating layer 68 (an area near the boundary). For example,the material of the high dielectric constant insulating layer 68 isselected so that a part of the interface on a side of the highdielectric constant insulating layer 68 is positively charged, whereas apart of the interface on a side of the silicon oxide layer 64 isnegatively charged. The high dielectric constant insulating layer 68 ofthe selected material is disposed on the silicon oxide layer 64.

Thus, according to this embodiment, the threshold voltages of cut-offtransistors SX and SY increase.

As a result, in the semiconductor memory of this embodiment, the dataretention characteristics of the memory cell MC can be improved byreduction of the off-leak currents of cut-off transistors SX and SY whenthe device is turned off.

The structure of the gate insulating film including the high dielectricconstant insulating layer in the cut-off transistors in the exampleshown in FIG. 39 may be applied to the cut-off transistors of thesemiconductor memory of the first embodiment.

In cut-off transistor SZ of the semiconductor memory of the secondembodiment, the insulating film between the gate electrode and the oxidesemiconductor layer may have a stacked structure corresponding to thatshown in FIG. 39.

As described above, in the semiconductor memory of the fourthembodiment, the reliability of the memory can be improved.

Fifth Embodiment

A semiconductor memory according to a fifth embodiment will be describedwith reference to FIG. 40 to FIG. 42.

As shown in FIG. 40 to FIG. 42, in the semiconductor memory of thisembodiment, cut-off transistors SX and SY have a MONOS(Metal-Oxide-Nitride-Oxide-Semiconductor) structure.

FIG. 40 is a sectional view showing a structure of a memory cell stringof a semiconductor memory of the fourth embodiment.

As shown in FIG. 40, a charge trap layer 71 is provided between an oxidesemiconductor layer 63 and the gate electrodes 81, 82, and 83. A chargetrap layer 71 is, for example, a silicon nitride film.

An insulating layer 72 is provided between the charge trap layer 71 andthe gate electrodes 81, 82, and 83. The insulating layer 72 is a siliconoxide layer. The charge trap layer 71 is provided between two insulatinglayers (for example, two silicon oxide layers) 64 and 72.

The charge trap layer 71 extends in an extending direction of a pillarPLR. The charge trap layer 71 is continuous on a side surface of thepillar PLR, among the transistors SX and SY and the memory cell MC. Thecharge trap layer 71 is common to transistors SX and SY and the memorycell MC. However, the charge trap layer 71 is electrically isolated fromthe oxide semiconductor layer 63, bit line BL and source line SL.

For example, in a test process after producing the semiconductor memoryof this embodiment or in shipping (or after shipping) of thesemiconductor memory, a charge is injected into the charge trap layer 71in a position facing the gate electrode 83 of the cut-off transistor SXand into the charge trap layer 71 in a position facing the gateelectrode 82 of the cut-off transistor SY.

A predetermined control voltage is applied to the gate electrodes 82 and83 to inject the charge into the charge trap layer 71.

The charge in the oxide semiconductor layer 63 is injected into thecharge trap layer 71 by a tunneling effect due to the application of thecontrol voltage.

The charge injected in the charge trap layer 71 is maintained at a traplevel of the charge trap later 71.

Accordingly, the threshold voltages (on voltages) of cut-off transistorsSX and SY are increased. The on voltages of cut-off transistors SX andSY during the operation of the semiconductor memory are lower than thecontrol voltage to inject the charge into the charge trap layer 71.

The charge trap layer 71 can continuously maintain the charge until thepredetermined voltage is applied to the cut-off transistors SX and SY.

During the time of injecting the charge into the parts of the chargetrap layer 71 that face cut-off transistors SX and SY (the time forapplying the predetermined control voltage), the voltage that causes thecharge injection into the charge trap layer 71 is not applied to thecontrol gate electrode 81 of the memory cell MC. Therefore, whencontrolling (adjusting) the threshold voltages of the cut-offtransistors SX and SY, no increase occurs in threshold voltage of thememory cell MC due to the charge injection to the charge trap layer 71.

FIG. 41 is a sectional view of a modification of the semiconductormemory shown in FIG. 40.

As shown in FIG. 41, each of cut-off transistors SX and SY and thememory cell MC may include an independent charge trap layer 71a.

FIG. 42 is a sectional view of a modification of the semiconductormemories shown in FIG. 40 and FIG. 41.

As shown in FIG. 42, a charge trap layer 71a may be provided on onlycut-off transistors SX and SY.

The charge trap layer 71a and the insulating layer 72 are providedbetween the gate electrode 83 of cut-off transistor SX and the oxidesemiconductor layer 63, and between the gate electrode 82 of cut-offtransistor SY and the oxide semiconductor layer 63.

In the memory cell MC, the control gate electrode 81 is in directcontact with the insulating layer 64.

By the structure shown in FIG. 41 and FIG. 42, an unintentional increaseof the threshold voltage in the memory cell MC, due to a trap of acharge by the charge trap layer, can be suppressed.

The gate structure including the charge trap layer in the cut-offtransistors shown in FIG. 40 to FIG. 42 may be applied to thesemiconductor memory of the first embodiment.

Furthermore, cut-off transistor SZ and the memory cell MC in thesemiconductor memory of the second embodiment may have a gate structurecorresponding to one of FIG. 40 to FIG. 42.

As described above, in the semiconductor memory of the fifth embodiment,the reliability of the memory can be improved.

Sixth Embodiment

A semiconductor memory according to a sixth embodiment will be describedwith reference to FIG. 43 to FIG. 45.

FIG. 43 is a bird's eye view illustrating a control unit of asemiconductor memory of the sixth embodiment.

As shown in FIG. 43, the semiconductor memory of this embodiment doesnot include cut-off gate line SGX extending in the X direction. Bit lineBL, cut-off gate line SGY, and word line WL extend in the same direction(for example, in the Y direction). Source line SL extends in a direction(for example, the X direction) which is parallel to a substrate surfaceand crossing the extending direction of the bit line.

A structure of a memory unit MU of the semiconductor memory according tothis embodiment will be explained more specifically with reference toFIG. 44 and FIG. 45.

FIG. 44 is a top view illustrating a planar structure of the memory unitMU in the semiconductor memory of this embodiment. In FIG. 44, a sectionalong the plane defined by the X direction and the Y direction is shown.FIG. 45 is a view showing a sectional structure of the memory unit MU inthe semiconductor memory of this embodiment.

As shown in FIG. 44 and FIG. 45, a pillar PLR having, for example, acylindrical shape, is formed in a hole provided in conductive layers SGYand WL (and the insulating layers) in the same manner as in thesemiconductor memory of the first embodiment.

The pillar PLR includes a plurality of layers (films) which are arrangedconcentrically around the Z direction as a central axis. A plurality oflayers 61, 62, 63, and 64 are provided between the conductive layer WL(and conductive layer SGY and the insulating layers) and the centerportion (axial portion) 60 x of the pillar PLR.

The layer 61 x is provided on the side surface of layer (for example, acylindrical insulating body) 60 x (the side surface is a surface in adirection parallel to the X-Y plane, an outer circumferential surface).The layer (for example, semiconductor layer) 61 x, which is cylindrical,is located between the layer 60 x and the layer 62. The material of thesemiconductor layer 61 x is selected from polycrystalline Si,polycrystalline Ge, polycrystalline SiGe, an oxide semiconductor (forexample, InGaZnO), a two-dimensional semiconductor material (forexample, MoS₂ or WSe₂) or the like. The semiconductor layer 61 x maycomprise a laminated film including at least two films of thesematerials, for example, a laminated film of Si and Ge or a laminatedfilm of two or more two-dimensional semiconductor materials.

The layer (for example, insulating layer) 62, which is cylindrical, isprovided on a side surface of the layer 61 x. The layer 62 is providedbetween the layer 61 x and the layer 63. For example, the material ofthe insulating layer 62 is selected from silicon oxide, siliconoxynitride, a high dielectric constant material, or the like. Theinsulating layer 62 may be a mixture film of these materials or alaminated film thereof.

The film thickness of the insulating layer 62 is set within the range of1 nm to 10 nm. Preferably, the film thickness of the insulating layer 62is set, for example, within the range of 3 nm to 7 nm.

The layer (for example, oxide semiconductor layer) 63, which iscylindrical, is provided on a side surface of the layer 62. The layer 63is provided between the layer 62 and the layer 64.

The material of the oxide semiconductor layer 63 is an oxide of In, Ga,Zn or Sn, or a mixture (compound) of such oxides. For example, thematerial of the oxide semiconductor layer 63 is InGaZnO, InGaSnO, or thelike. The material of the oxide semiconductor layer 63 may be used forthe semiconductor layer 61 x.

The film thickness of the oxide semiconductor layer 63 is set within therange of 1 nm to 15 nm. Preferably, the film thickness of the oxidesemiconductor layer 63 is set, for example, within the range of 3 nm to10 nm.

The layer (for example, insulating layer) 64 is provided on the sidesurface of the layer 63. The layer 64 is provided between layer 63 andconductive layer WL (and conductive layer SGY and the insulatinglayers).

The insulating layer 64 is formed of the same material as the insulatinglayer 62. The film thickness of the insulating layer 64 is equal ornearly equal to that of the insulating layer 62. The material of theinsulating layer 64 may be different from that of the insulating layer62. The film thickness of the insulating layer 64 may be different fromthat of the insulating layer 62.

As shown in FIG. 45, above a substrate 90, a conductive layer 81 servingas word line WL and a conductive layer 82 serving as cut-off gate lineSGY are stacked above a conductive layer 80 serving as bit line BL.

The conductive layers 81 and 82 are covered with an insulating layer99A. Each of the conductive layers 81 and 82 is a single-layer film orlaminated film including, for example, at least one of polysilicon, ametal and a conductive compound (for example, silicide).

A conductive layer 84 serving as source line SL is provided above theconductive layer 82 with the insulating layer interposed therebetween.

One end (bottom portion) of the semiconductor layer 61 x of the pillarPLR in the Z direction, is in direct contact with the conductive layer80. The other end (top portion) of the semiconductor layer 61 x in the Zdirection is in direct contact with the conductive layer 87 x. Forexample, in the bottom portion of the pillar PLR, the semiconductorlayer 61 x is provided between the conductive layer 80 and theinsulating layer 60 x. The bottom portion of the insulating layer 60 xin the Z direction is in contact with the semiconductor layer 61 x.

The conductive layer 84 extends in the X direction, while the conductivelayers 80, 81, and 82 extend in the Y direction.

In the oxide semiconductor layer 63 of the pillar PLR, the bottomportion of the oxide semiconductor layer 63 in the Z direction is incontact with an insulating layer 89 formed on the conductive layer 80.The insulation layer 89 is provided between the conductive layer 80 andthe oxide semiconductor layer 63. The oxide semiconductor layer 63 isseparated from the conductive layer 80 by the insulating layer 89. Theupper portion of the oxide semiconductor layer 63 in the Z direction isin direct contact with the conductive layer 84.

A through hole (opening portion) is provided in the insulating layer 89.The insulating layer 60 x and the semiconductor layer 61 x are providedinside the hole of insulating layer 89. For example, in the hole of theinsulating layer 89, the insulating layer 62 is provided between theside surface of the insulating layer 89 and the side surface of thesemiconductor layer 61 x. Neither the oxide semiconductor layer 63 northe insulating layer 64 is provided in the hole of the insulating layer89.

The bottom portion of the insulating layer 62 in the Z direction is incontact with, for example, the conductive layer 80. The bottom portionof the insulating layer 64 in the Z direction is in contact with, forexample, the insulating layer 89. The upper portions of the insulatinglayers 62 and 64 in the Z direction are in contact with the conductivelayer 84.

In a write operation of the semiconductor memory of this modification, avoltage of 0V is applied to selected source lines SL, and a positivebias voltage of a voltage value Voff or higher is applied tonon-selected source lines.

Accordingly, even if a cut-off gate line extending in the X direction isnot provided in the memory unit, the non-selected cells can continuouslyretain carriers in the charge storage layer (oxide semiconductor layer63).

The memory units MU shown in FIG. 43 to FIG. 45 are arranged in a matrixwithin the memory cell array 10, sharing the lines BL, WL, SGY, and SLin the same manner as in the memory units of the semiconductor memory ofthe first embodiment (see FIG. 8 to FIG. 12).

In this embodiment, the structure of the pillar including the oxidesemiconductor layer may extend between the bit line and the source line,as shown in FIG. 3 (and FIG. 11 and FIG. 12).

In this embodiment, the material of the gate electrode of the cut-offtransistor may be a p-type semiconductor (for example, p-typepolysilicon) as shown in FIG. 38.

In this embodiment, the gate insulating film of the cut-off transistormay have a stacked structure (a structure including, for example, a highdielectric constant insulating film), as shown in FIG. 39.

In this embodiment, the cut-off transistor may have a gate structure ofthe MONOS structure, as shown in FIG. 40 to FIG. 42.

In this embodiment, the memory unit is provided with the cut-off gateline extending in the Y direction, but no cut-off gate line extending inthe X direction.

Thus, according to the semiconductor memory of this embodiment, thenumber of cut-off gate lines in the memory cell unit is reduced.Therefore, this embodiment can reduce the semiconductor memory cost.

Others

While certain embodiments have been described, these embodiments havebeen presented by way of example only, and are not intended to limit thescope of the inventions.

Indeed, the novel embodiments described herein may be embodied in avariety of other forms; furthermore, various omissions, substitutionsand changes in the form of the embodiments described herein may be madewithout departing from the spirit of the inventions. The accompanyingclaims and their equivalents are intended to cover such forms ormodifications as would fall within the scope and spirit of theinventions.

What is claimed is:
 1. A semiconductor memory comprising: a bit line; asource line; a member extending in a first direction from the bit lineto the source line and including an oxide semiconductor layer, a firstend of the oxide semiconductor layer in the first direction is incontact with the source line, and a second end of the oxidesemiconductor layer in the first direction electrically disconnectedfrom the bit line, the oxide semiconductor layer including a firstportion, second portion, and third portion arranged in order from thesecond end to the first end; first, second and third conductive layersdisposed along the first direction, the first conductive layer facingthe first portion and including a first material, the second conductivelayer facing the second portion and including a second materialdifferent from the first material, and the third conductive layer facingthe third portion including the second material; a memory cell in afirst position corresponding to the first portion, the memory cellincluding a charge storage layer in the first portion; a firsttransistor in a second position corresponding to the second portion; anda second transistor in a third position corresponding to the thirdportion.
 2. The semiconductor memory according to claim 1, wherein thefirst material includes at least one of a n-type semiconductor, metaland a conductive compound, and the second material includes a p-typesemiconductor.
 3. The semiconductor memory according to claim 1, whereinthe oxide semiconductor layer extends from the first portion to thesource line, the first transistor includes a first channel region in thesecond portion, and the second transistor includes a second channelregion in the third portion.
 4. The semiconductor memory according toclaim 1, wherein the member includes a semiconductor layer extending inthe first direction, the memory cell includes a third channel region inthe semiconductor layer, a third end of the semiconductor layer in thefirst direction is in contact with the source line; and a fourth end ofthe semiconductor layer in the first direction is in contact with thebit line.
 5. The semiconductor memory according to claim 1, furthercomprising: an insulating layer disposed between the source line and thebit line and covering the first, second and third conductive layers,wherein the oxide semiconductor layer is provided between the sourceline and the insulating layer.
 6. The semiconductor memory according toclaim 1, wherein a threshold voltage of the memory cell varies inaccordance with an amount of charges in the charge storage layer, thememory cell retains first data where the threshold voltage of the memorycell is a first value, and the memory cell retains second data differentfrom the first data where the threshold voltage of the memory cell is asecond value different from the first value.
 7. The semiconductor memorydevice according to claim 6, wherein the charges are supplied from thesource line to the oxide semiconductor layer.
 8. A semiconductor memorycomprising: a bit line; a source line; a member extending in a firstdirection from the bit line to the source line and including an oxidesemiconductor layer, a first end of the oxide semiconductor layer in thefirst direction is in contact with the source line, and a second end ofthe oxide semiconductor layer in the first direction electricallydisconnected from the bit line, the oxide semiconductor layer includinga first portion, second portion, and third portion arranged in orderfrom the second end to the first end; first, second and third conductivelayers disposed along the first direction, the first conductive layerfacing the first portion, the second conductive layer facing the secondportion, and third conductive layer facing the third portion; a firstinsulating layer between the oxide semiconductor layer and the first tothird conductive layers; a second insulating layer between the firstinsulating layer and the second conductive layer, a dielectric constantof the second insulating layer higher than a dielectric constant of thefirst insulating layer; a third insulating layer between the firstinsulating layer and the third conductive layer, a dielectric constantof the third insulating layer higher than a dielectric constant of thefirst insulating layer; a memory cell in a first position correspondingto first portion, the memory cell including a charge storage layer inthe first portion; a first transistor in a second position correspondingto the second portion; and a second transistor in a third positioncorresponding to the third portion.
 9. The semiconductor memoryaccording to claim 8, wherein the first conductive layer is directly incontact with the first insulating layer.
 10. The semiconductor memoryaccording to claim 8, wherein the second insulating layer includes atleast one of hafnium, aluminum, and tantalum.
 11. The semiconductormemory according to claim 8, wherein a number density of an oxygen ofthe second insulating layer is higher than a number density of an oxygenof silicon oxide.
 12. The semiconductor memory according to claim 8,wherein a threshold voltage of the memory cell varies in accordance withan amount of charges in the charge storage layer, the memory cellretains first data where the threshold voltage of the memory cell is afirst value, and the memory cell retains second data different from thefirst data where the threshold voltage of the memory cell is a secondvalue different from the first value.
 13. The semiconductor memorydevice according to claim 12, wherein the charges are supplied from thesource line to the oxide semiconductor layer.
 14. A semiconductor memorycomprising: a bit line; a source line; a member extending in a firstdirection from the bit line to the source line and including an oxidesemiconductor layer, a first end of the oxide semiconductor layer in thefirst direction is in contact with the source line, and a second end ofthe oxide semiconductor layer in the first direction electricallydisconnected from the bit line, the oxide semiconductor layer includinga first portion, second portion, and third portion arranged in orderfrom the second end to the first end; first, second and third conductivelayers disposed along the first direction, the first conductive layerfacing the first portion, the second conductive layer facing the secondportion, and third conductive layer facing the third portion; a firstinsulating layer between the oxide semiconductor layer and the first tothird conductive layers; a second insulating layer between the firstinsulating layer and the second conductive layer; a first charge storagelayer between the first insulating layer and the second insulating layera third insulating layer between the first insulating layer and thethird conductive layer; a second charge storage layer between the firstinsulating layer and the third insulating layer; a memory cell in afirst position corresponding to the first portion, the memory cellincluding a third charge storage layer in the first portion; a firsttransistor in a second position corresponding to the second portion; anda second transistor in a third position corresponding to the thirdportion.
 15. The semiconductor memory according to claim 14, wherein thefirst and second charge storage layers are continuous between the firstand second transistors.
 16. The semiconductor memory according to claim14, wherein the first charge storage layer is isolated from the secondcharge storage layer.
 17. The semiconductor memory according to claim14, wherein the first conductive layer is directly in contact with thefirst insulating layer.
 18. The semiconductor memory according to claim14, wherein a fourth insulating layer between the first insulating layerand the first conductive layer; and a fifth insulating layer between thefirst insulating layer and the fourth insulating layer.
 19. Thesemiconductor memory according to claim 14, wherein a threshold voltageof the memory cell varies in accordance with an amount of charges in thecharge storage layer, the memory cell retains first data where thethreshold voltage of the memory cell is a first value, and the memorycell retains second data different from the first data where thethreshold voltage of the memory cell is a second value different fromthe first value.
 20. The semiconductor memory device according to claim19, wherein the charges are supplied from the source line to the oxidesemiconductor layer.